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APT50GN60BDQ2G

  • Available: 150

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $13.59600US $13.60
10+US $12.23640US $122.36
30+US $9.51720US $285.52
100+US $7.81770US $781.77
500+US $7.47780US $3738.90
1000+US $6.79800US $6798.00

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    Microsemi
  • Manufacturer's Part No.
    APT50GN60BDQ2G
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Single
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Through Hole
  • Width
    16.26mm
  • Height
    5.31mm
  • Length
    21.46mm
  • Weight
    38.000013g
  • IGBT Type
    Trench Field Stop
  • Lead Free
    Lead Free
  • Packaging
    Tube
  • Pin Count
    3
  • Published
    1999
  • Input Type
    Standard
  • Gate Charge
    325nC
  • Part Status
    Active
  • Pbfree Code
    yes
  • Subcategory
    Insulated Gate BIP Transistors
  • REACH Status
    REACH Unaffected
  • Turn On Time
    45 ns
  • JEDEC-95 Code
    TO-247AD
  • Mounting Type
    Through Hole
  • Current Rating
    107A
  • Package / Case
    TO-247-3
  • Test Condition
    400V, 50A, 4.3 Ω, 15V
  • Case Connection
    COLLECTOR
  • Terminal Finish
    Tin/Silver/Copper (Sn/Ag/Cu)
  • Switching Energy
    1185μJ (on), 1565μJ (off)
  • Factory Lead Time
    25 Weeks
  • Number of Elements
    1
  • Turn On Delay Time
    20 ns
  • Voltage - Rated DC
    600V
  • Radiation Hardening
    No
  • Td (on/off) @ 25°C
    20ns/230ns
  • Turn-Off Delay Time
    230 ns
  • Element Configuration
    Single
  • Max Collector Current
    107A
  • Max Power Dissipation
    366W
  • Operating Temperature
    -55°C~175°C TJ
  • Polarity/Channel Type
    N-CHANNEL
  • Number of Terminations
    3
  • Transistor Application
    POWER CONTROL
  • Vce(on) (Max) @ Vge, Ic
    1.85V @ 15V, 50A
  • Gate-Emitter Voltage-Max
    30V
  • Turn Off Time-Nom (toff)
    400 ns
  • Transistor Element Material
    SILICON
  • Continuous Collector Current
    107A
  • Gate-Emitter Thr Voltage-Max
    6.5V
  • Collector Emitter Voltage (VCEO)
    600V
  • Current - Collector Pulsed (Icm)
    150A
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    1.5V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-PSFM-T3
  • JESD-609 Code
    e1
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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