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APT60GA60JD60

  • Available: 7151

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $52.28840US $52.29
10+US $39.21630US $392.16
30+US $33.98746US $1019.62
100+US $30.06583US $3006.58
500+US $28.23574US $14117.87
1000+US $26.14420US $26144.20

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Product Parameter

  • Manufacturer
    Microsemi
  • Manufacturer's Part No.
    APT60GA60JD60
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Modules
  • Series
    POWER MOS 8™
  • ECCN
    EAR99
  • Input
    Standard
  • Mount
    Chassis Mount, Screw
  • Width
    25.4mm
  • Height
    9.6mm
  • Length
    38.2mm
  • Weight
    30.000004g
  • IGBT Type
    PT
  • Pin Count
    4
  • Published
    1999
  • Part Status
    Active
  • Pbfree Code
    yes
  • Power - Max
    356W
  • REACH Status
    REACH Unaffected
  • Turn On Time
    82 ns
  • Configuration
    Single
  • Mounting Type
    Chassis Mount
  • Terminal Form
    UNSPECIFIED
  • NTC Thermistor
    No
  • Number of Pins
    4
  • Package / Case
    SOT-227-4, miniBLOC
  • Case Connection
    ISOLATED
  • Factory Lead Time
    32 Weeks
  • Input Capacitance
    8.01nF
  • Terminal Position
    UPPER
  • Additional Feature
    LOW CONDUCTION LOSS, UL RECOGNIZED
  • Number of Elements
    1
  • Max Collector Current
    112A
  • Max Power Dissipation
    356W
  • Operating Temperature
    -55°C~150°C TJ
  • Polarity/Channel Type
    N-CHANNEL
  • Number of Terminations
    4
  • Transistor Application
    POWER CONTROL
  • Vce(on) (Max) @ Vge, Ic
    2.5V @ 15V, 62A
  • Turn Off Time-Nom (toff)
    333 ns
  • Transistor Element Material
    SILICON
  • Input Capacitance (Cies) @ Vce
    8.01nF @ 25V
  • Collector Emitter Voltage (VCEO)
    600V
  • Current - Collector Cutoff (Max)
    275μA
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    2V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • RoHS Status
    ROHS3 Compliant
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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