APT60M80JVR
- Manufacturer's Part No.:APT60M80JVR
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:POWER MOS V®
- Description:MOSFET N-CH 600V 55A SOT-227
- Quantity:RFQAdd to RFQ List
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- Delivery:
- Available: 9372
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.00000 | US $0.00 |
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Product Parameter
- ManufacturerMicrosemi
- Manufacturer's Part No.APT60M80JVR
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesPOWER MOS V®
- ECCNEAR99
- MountChassis Mount, Screw
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTube
- Pin Count4
- Published1997
- Rise Time25ns
- Vgs (Max)±30V
- TechnologyMOSFET (Metal Oxide)
- Part StatusObsolete
- Pbfree Codeyes
- SubcategoryFET General Purpose Power
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Mounting TypeChassis Mount
- Terminal FormUNSPECIFIED
- Current Rating55A
- Number of Pins4
- Operating ModeENHANCEMENT MODE
- Package / CaseSOT-227-4, miniBLOC
- Case ConnectionISOLATED
- Fall Time (Typ)31 ns
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Power Dissipation568W
- Terminal PositionUPPER
- Number of Elements1
- Turn On Delay Time15 ns
- Vgs(th) (Max) @ Id4V @ 5mA
- Voltage - Rated DC600V
- Radiation HardeningNo
- Turn-Off Delay Time73 ns
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max568W Tc
- Number of Terminations4
- Rds On (Max) @ Id, Vgs80m Ω @ 500mA, 10V
- Transistor ApplicationSWITCHING
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs870nC @ 10V
- Gate to Source Voltage (Vgs)30V
- Avalanche Energy Rating (Eas)3200 mJ
- Continuous Drain Current (ID)55A
- Drain-source On Resistance-Max0.08Ohm
- Pulsed Drain Current-Max (IDM)220A
- Input Capacitance (Ciss) (Max) @ Vds14500pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C55A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- RoHS StatusRoHS Compliant
- JESD-609 Codee1
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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