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APT64GA90B2D30

  • Available: 2

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $17.89000US $17.89
10+US $16.10100US $161.01
30+US $12.52300US $375.69
100+US $10.28675US $1028.68
500+US $9.83950US $4919.75
1000+US $8.94500US $8945.00

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Product Parameter

  • Manufacturer
    Microsemi
  • Manufacturer's Part No.
    APT64GA90B2D30
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Single
  • Series
    POWER MOS 8™
  • ECCN
    EAR99
  • Mount
    Through Hole
  • IGBT Type
    PT
  • Packaging
    Tube
  • Pin Count
    3
  • Input Type
    Standard
  • Gate Charge
    162nC
  • Part Status
    Active
  • Pbfree Code
    yes
  • Power - Max
    500W
  • REACH Status
    REACH Unaffected
  • Turn On Time
    44 ns
  • JEDEC-95 Code
    TO-247AD
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3 Variant
  • Test Condition
    600V, 38A, 4.7 Ω, 15V
  • Case Connection
    COLLECTOR
  • Terminal Finish
    Tin/Silver/Copper (Sn/Ag/Cu)
  • Switching Energy
    1192μJ (on), 1088μJ (off)
  • Factory Lead Time
    29 Weeks
  • Additional Feature
    LOW CONDUCTION LOSS
  • Number of Elements
    1
  • Radiation Hardening
    No
  • Td (on/off) @ 25°C
    18ns/131ns
  • Element Configuration
    Single
  • Max Collector Current
    117A
  • Max Power Dissipation
    500W
  • Operating Temperature
    -55°C~150°C TJ
  • Polarity/Channel Type
    N-CHANNEL
  • Number of Terminations
    3
  • Transistor Application
    POWER CONTROL
  • Vce(on) (Max) @ Vge, Ic
    3.1V @ 15V, 38A
  • Turn Off Time-Nom (toff)
    352 ns
  • Transistor Element Material
    SILICON
  • Collector Emitter Voltage (VCEO)
    900V
  • Current - Collector Pulsed (Icm)
    193A
  • Collector Emitter Breakdown Voltage
    900V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-PSIP-T3
  • JESD-609 Code
    e1
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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