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APT65GP60B2G

  • Available: 119

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $30.14648US $30.15
10+US $22.60986US $226.10
30+US $19.59521US $587.86
100+US $17.33423US $1733.42
500+US $16.27910US $8139.55
1000+US $15.07324US $15073.24

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Product Parameter

  • Manufacturer
    Microsemi
  • Manufacturer's Part No.
    APT65GP60B2G
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Single
  • Series
    POWER MOS 7®
  • ECCN
    EAR99
  • Mount
    Through Hole
  • IGBT Type
    PT
  • Lead Free
    Lead Free
  • Packaging
    Tube
  • Pin Count
    3
  • Published
    1999
  • Input Type
    Standard
  • Gate Charge
    210nC
  • Part Status
    Not For New Designs
  • Pbfree Code
    yes
  • REACH Status
    REACH Unaffected
  • Turn On Time
    84 ns
  • Mounting Type
    Through Hole
  • Current Rating
    100A
  • Number of Pins
    3
  • Package / Case
    TO-247-3 Variant
  • Test Condition
    400V, 65A, 5 Ω, 15V
  • Case Connection
    COLLECTOR
  • Terminal Finish
    TIN SILVER COPPER
  • Switching Energy
    605μJ (on), 896μJ (off)
  • Additional Feature
    LOW CONDUCTION LOSS
  • Number of Elements
    1
  • Voltage - Rated DC
    600V
  • Radiation Hardening
    No
  • Td (on/off) @ 25°C
    30ns/91ns
  • Element Configuration
    Single
  • Max Collector Current
    100A
  • Max Power Dissipation
    833W
  • Operating Temperature
    -55°C~150°C TJ
  • Polarity/Channel Type
    N-CHANNEL
  • Number of Terminations
    3
  • Transistor Application
    POWER CONTROL
  • Vce(on) (Max) @ Vge, Ic
    2.7V @ 15V, 65A
  • Turn Off Time-Nom (toff)
    219 ns
  • Transistor Element Material
    SILICON
  • Collector Emitter Voltage (VCEO)
    600V
  • Current - Collector Pulsed (Icm)
    250A
  • Collector Emitter Breakdown Voltage
    600V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e1
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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