APT7F80K
- Manufacturer's Part No.:APT7F80K
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:POWER MOS 8™
- Description:MOSFET N-CH 800V 7A TO-220
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Delivery:
- Available: 10175
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.00000 | US $0.00 |
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Product Parameter
- ManufacturerMicrosemi
- Manufacturer's Part No.APT7F80K
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesPOWER MOS 8™
- ECCNEAR99
- MountThrough Hole
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTube
- Pin Count3
- Rise Time11ns
- Vgs (Max)±30V
- TechnologyMOSFET (Metal Oxide)
- Part StatusObsolete
- Pbfree Codeyes
- REACH StatusREACH Unaffected
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-220AB
- Mounting TypeThrough Hole
- Current Rating7.1A
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-220-3
- Case ConnectionDRAIN
- Fall Time (Typ)10 ns
- Terminal FinishPURE MATTE TIN
- Power Dissipation225W
- Terminal PositionSINGLE
- Additional FeatureAVALANCHE RATED, HIGH RELIABILITY
- Number of Elements1
- Turn On Delay Time8 ns
- Vgs(th) (Max) @ Id5V @ 500μA
- Voltage - Rated DC800V
- Radiation HardeningNo
- Turn-Off Delay Time33 ns
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max225W Tc
- Number of Terminations3
- Rds On (Max) @ Id, Vgs1.5 Ω @ 4A, 10V
- Transistor ApplicationSWITCHING
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)7A
- Gate Charge (Qg) (Max) @ Vgs43nC @ 10V
- Gate to Source Voltage (Vgs)30V
- Avalanche Energy Rating (Eas)285 mJ
- Continuous Drain Current (ID)7A
- Pulsed Drain Current-Max (IDM)25A
- Input Capacitance (Ciss) (Max) @ Vds1335pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C7A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- RoHS StatusRoHS Compliant
- JESD-30 CodeR-PSFM-T3
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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