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APT8020JLL

  • Available: 86

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $60.43296US $60.43
10+US $45.32472US $453.25
30+US $39.28142US $1178.44
100+US $34.74895US $3474.90
500+US $32.63380US $16316.90
1000+US $30.21648US $30216.48

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    Microsemi
  • Manufacturer's Part No.
    APT8020JLL
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    POWER MOS 7®
  • ECCN
    EAR99
  • Mount
    Chassis Mount, Screw
  • Width
    25.4mm
  • Height
    9.6mm
  • Length
    38.2mm
  • Weight
    30.000004g
  • FET Type
    N-Channel
  • Lead Free
    Lead Free
  • Packaging
    Tube
  • Pin Count
    4
  • Published
    1997
  • Rise Time
    14ns
  • Vgs (Max)
    ±30V
  • Technology
    MOSFET (Metal Oxide)
  • Part Status
    Active
  • Pbfree Code
    yes
  • Subcategory
    FET General Purpose Power
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Chassis Mount
  • Terminal Form
    UNSPECIFIED
  • Current Rating
    33A
  • Number of Pins
    4
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    SOT-227-4, miniBLOC
  • Case Connection
    ISOLATED
  • Fall Time (Typ)
    10 ns
  • Terminal Finish
    Tin/Silver/Copper (Sn/Ag/Cu)
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 1 month ago)
  • Factory Lead Time
    16 Weeks
  • Power Dissipation
    520W
  • Terminal Position
    UPPER
  • Number of Channels
    1
  • Number of Elements
    1
  • Turn On Delay Time
    12 ns
  • Vgs(th) (Max) @ Id
    5V @ 2.5mA
  • Voltage - Rated DC
    800V
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    39 ns
  • Element Configuration
    Single
  • Operating Temperature
    -55°C~150°C TJ
  • Power Dissipation-Max
    520W Tc
  • Number of Terminations
    4
  • Rds On (Max) @ Id, Vgs
    200m Ω @ 16.5A, 10V
  • Transistor Application
    SWITCHING
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    195nC @ 10V
  • Gate to Source Voltage (Vgs)
    30V
  • Avalanche Energy Rating (Eas)
    3000 mJ
  • Continuous Drain Current (ID)
    33A
  • Drain-source On Resistance-Max
    0.2Ohm
  • Drain to Source Breakdown Voltage
    800V
  • Input Capacitance (Ciss) (Max) @ Vds
    5200pF @ 25V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Current - Continuous Drain (Id) @ 25°C
    33A Tc

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e1
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

SHIPPING GUIDE

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  • Shipping Cost

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  • Delivery Time

    We ship orders once daily, around 5 p.m., except on Sundays. The estimated delivery time may vary depending on the courier service you choose, but typically ranges from 5 to 7 business days.

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