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APTC60HM35T3G

  • In Stock: 1100
  • Available: 1310

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $180.20100US $180.20
10+US $156.17420US $1561.74
30+US $141.75812US $4252.74
100+US $129.74472US $12974.47
500+US $126.14070US $63070.35
1000+US $120.13400US $120134.00

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    Microsemi
  • Manufacturer's Part No.
    APTC60HM35T3G
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Chassis Mount, Screw
  • Width
    40.8mm
  • Height
    11.5mm
  • Length
    73.4mm
  • FET Type
    4 N-Channel (H-Bridge)
  • Packaging
    Bulk
  • Pin Count
    25
  • Published
    2012
  • Rise Time
    30ns
  • FET Feature
    Standard
  • Part Status
    Active
  • Pbfree Code
    yes
  • Subcategory
    FET General Purpose Power
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Chassis Mount
  • Terminal Form
    UNSPECIFIED
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Number of Pins
    3
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    SP3
  • Case Connection
    ISOLATED
  • Fall Time (Typ)
    84 ns
  • Terminal Finish
    TIN SILVER COPPER
  • Factory Lead Time
    36 Weeks
  • Power Dissipation
    416W
  • Terminal Position
    UPPER
  • Additional Feature
    AVALANCHE RATED
  • Number of Channels
    1
  • Number of Elements
    4
  • Turn On Delay Time
    21 ns
  • Vgs(th) (Max) @ Id
    3.9V @ 5.4mA
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    283 ns
  • Element Configuration
    Single
  • Max Power Dissipation
    416W
  • Operating Temperature
    -40°C~150°C TJ
  • Number of Terminations
    25
  • Rds On (Max) @ Id, Vgs
    35m Ω @ 72A, 10V
  • Transistor Application
    SWITCHING
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    518nC @ 10V
  • Gate to Source Voltage (Vgs)
    20V
  • Continuous Drain Current (ID)
    72A
  • Drain to Source Voltage (Vdss)
    600V
  • Pulsed Drain Current-Max (IDM)
    200A
  • Drain to Source Breakdown Voltage
    600V
  • Input Capacitance (Ciss) (Max) @ Vds
    14000pF @ 25V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-XUFM-X25
  • JESD-609 Code
    e1
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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