APTC60HM35T3G
- Manufacturer's Part No.:APTC60HM35T3G
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:MOSFET 4N-CH 600V 72A SP3
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- In Stock: 1100
- Available: 1310
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $180.20100 | US $180.20 |
10+ | US $156.17420 | US $1561.74 |
30+ | US $141.75812 | US $4252.74 |
100+ | US $129.74472 | US $12974.47 |
500+ | US $126.14070 | US $63070.35 |
1000+ | US $120.13400 | US $120134.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerMicrosemi
- Manufacturer's Part No.APTC60HM35T3G
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- Series-
- ECCNEAR99
- MountChassis Mount, Screw
- Width40.8mm
- Height11.5mm
- Length73.4mm
- FET Type4 N-Channel (H-Bridge)
- PackagingBulk
- Pin Count25
- Published2012
- Rise Time30ns
- FET FeatureStandard
- Part StatusActive
- Pbfree Codeyes
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- Mounting TypeChassis Mount
- Terminal FormUNSPECIFIED
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseSP3
- Case ConnectionISOLATED
- Fall Time (Typ)84 ns
- Terminal FinishTIN SILVER COPPER
- Factory Lead Time36 Weeks
- Power Dissipation416W
- Terminal PositionUPPER
- Additional FeatureAVALANCHE RATED
- Number of Channels1
- Number of Elements4
- Turn On Delay Time21 ns
- Vgs(th) (Max) @ Id3.9V @ 5.4mA
- Radiation HardeningNo
- Turn-Off Delay Time283 ns
- Element ConfigurationSingle
- Max Power Dissipation416W
- Operating Temperature-40°C~150°C TJ
- Number of Terminations25
- Rds On (Max) @ Id, Vgs35m Ω @ 72A, 10V
- Transistor ApplicationSWITCHING
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs518nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)72A
- Drain to Source Voltage (Vdss)600V
- Pulsed Drain Current-Max (IDM)200A
- Drain to Source Breakdown Voltage600V
- Input Capacitance (Ciss) (Max) @ Vds14000pF @ 25V
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-XUFM-X25
- JESD-609 Codee1
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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