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APTC60HM70SCTG

  • Available: 36

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $167.62770US $167.63
10+US $130.37710US $1303.77
30+US $111.75180US $3352.55
100+US $102.43915US $10243.91
500+US $98.71409US $49357.05
1000+US $93.12650US $93126.50

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Product Parameter

  • Manufacturer
    Microsemi
  • Manufacturer's Part No.
    APTC60HM70SCTG
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    CoolMOS™
  • ECCN
    EAR99
  • Mount
    Chassis Mount, Screw
  • FET Type
    4 N-Channel (H-Bridge)
  • Packaging
    Bulk
  • Pin Count
    14
  • Published
    1997
  • Rise Time
    30ns
  • FET Feature
    Standard
  • Part Status
    Active
  • Pbfree Code
    yes
  • Subcategory
    FET General Purpose Power
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Chassis Mount
  • Terminal Form
    UNSPECIFIED
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Number of Pins
    4
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    SP4
  • Case Connection
    ISOLATED
  • Fall Time (Typ)
    84 ns
  • Terminal Finish
    TIN SILVER COPPER
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 1 month ago)
  • Factory Lead Time
    36 Weeks
  • Power Dissipation
    250W
  • Terminal Position
    UPPER
  • Additional Feature
    AVALANCHE RATED
  • Number of Elements
    4
  • Turn On Delay Time
    21 ns
  • Vgs(th) (Max) @ Id
    3.9V @ 2.7mA
  • Turn-Off Delay Time
    283 ns
  • Qualification Status
    Not Qualified
  • Max Power Dissipation
    250W
  • Operating Temperature
    -40°C~150°C TJ
  • Number of Terminations
    14
  • Rds On (Max) @ Id, Vgs
    70m Ω @ 39A, 10V
  • Transistor Application
    SWITCHING
  • DS Breakdown Voltage-Min
    600V
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    259nC @ 10V
  • Gate to Source Voltage (Vgs)
    20V
  • Avalanche Energy Rating (Eas)
    1800 mJ
  • Continuous Drain Current (ID)
    39A
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Drain to Source Voltage (Vdss)
    600V
  • Drain-source On Resistance-Max
    0.07Ohm
  • Pulsed Drain Current-Max (IDM)
    156A
  • Input Capacitance (Ciss) (Max) @ Vds
    7000pF @ 25V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e1
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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