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APTC60TAM35PG

  • Available: 36

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $180.94335US $180.94
10+US $156.81757US $1568.18
30+US $142.34210US $4270.26
100+US $130.27921US $13027.92
500+US $126.66035US $63330.17
1000+US $120.62890US $120628.90

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    Microsemi
  • Manufacturer's Part No.
    APTC60TAM35PG
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Chassis Mount, Screw
  • FET Type
    6 N-Channel (3-Phase Bridge)
  • Packaging
    Bulk
  • Pin Count
    21
  • Published
    2006
  • Rise Time
    30ns
  • FET Feature
    Standard
  • Part Status
    Active
  • Pbfree Code
    yes
  • Subcategory
    FET General Purpose Power
  • REACH Status
    REACH Unaffected
  • Configuration
    3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
  • Mounting Type
    Chassis Mount
  • Terminal Form
    UNSPECIFIED
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Number of Pins
    6
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    SP6
  • Case Connection
    ISOLATED
  • Fall Time (Typ)
    84 ns
  • Terminal Finish
    TIN SILVER COPPER
  • Factory Lead Time
    36 Weeks
  • Power Dissipation
    416W
  • Terminal Position
    UPPER
  • Additional Feature
    AVALANCHE RATED
  • Number of Elements
    6
  • Turn On Delay Time
    21 ns
  • Vgs(th) (Max) @ Id
    3.9V @ 5.4mA
  • Turn-Off Delay Time
    283 ns
  • Qualification Status
    Not Qualified
  • Max Power Dissipation
    416W
  • Operating Temperature
    -40°C~150°C TJ
  • Number of Terminations
    21
  • Rds On (Max) @ Id, Vgs
    35m Ω @ 72A, 10V
  • Transistor Application
    SWITCHING
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    518nC @ 10V
  • Gate to Source Voltage (Vgs)
    20V
  • Avalanche Energy Rating (Eas)
    1800 mJ
  • Continuous Drain Current (ID)
    72A
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Drain to Source Voltage (Vdss)
    600V
  • Drain-source On Resistance-Max
    0.035Ohm
  • Pulsed Drain Current-Max (IDM)
    200A
  • Input Capacitance (Ciss) (Max) @ Vds
    14000pF @ 25V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-XUFM-X21
  • JESD-609 Code
    e1
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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