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APTC80TA15PG

  • Available: 36

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $140.93316US $140.93
10+US $109.61468US $1096.15
30+US $93.95544US $2818.66
100+US $86.12582US $8612.58
500+US $82.99397US $41496.99
1000+US $78.29620US $78296.20

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Product Parameter

  • Manufacturer
    Microsemi
  • Manufacturer's Part No.
    APTC80TA15PG
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Chassis Mount, Screw
  • FET Type
    6 N-Channel (3-Phase Bridge)
  • Packaging
    Bulk
  • Pin Count
    21
  • Published
    2012
  • Rise Time
    13ns
  • FET Feature
    Standard
  • Part Status
    Active
  • Pbfree Code
    yes
  • Subcategory
    FET General Purpose Power
  • REACH Status
    REACH Unaffected
  • Configuration
    3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
  • Mounting Type
    Chassis Mount
  • Terminal Form
    UNSPECIFIED
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Number of Pins
    6
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    SP6
  • Case Connection
    ISOLATED
  • Fall Time (Typ)
    35 ns
  • Terminal Finish
    TIN SILVER COPPER
  • Factory Lead Time
    36 Weeks
  • Power Dissipation
    277W
  • Terminal Position
    UPPER
  • Additional Feature
    AVALANCHE RATED
  • Number of Elements
    6
  • Turn On Delay Time
    10 ns
  • Vgs(th) (Max) @ Id
    3.9V @ 2mA
  • Turn-Off Delay Time
    83 ns
  • Qualification Status
    Not Qualified
  • Max Power Dissipation
    277W
  • Operating Temperature
    -40°C~150°C TJ
  • Number of Terminations
    21
  • Rds On (Max) @ Id, Vgs
    150m Ω @ 14A, 10V
  • Transistor Application
    SWITCHING
  • DS Breakdown Voltage-Min
    800V
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    180nC @ 10V
  • Gate to Source Voltage (Vgs)
    30V
  • Continuous Drain Current (ID)
    28A
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Drain to Source Voltage (Vdss)
    800V
  • Drain-source On Resistance-Max
    0.15Ohm
  • Pulsed Drain Current-Max (IDM)
    110A
  • Input Capacitance (Ciss) (Max) @ Vds
    4507pF @ 25V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-XUFM-X21
  • JESD-609 Code
    e1
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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