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APTGF50DH60T1G

  • Available: 8383

Reference Price(In US Dollars)

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Product Parameter

  • Manufacturer
    Microsemi
  • Manufacturer's Part No.
    APTGF50DH60T1G
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Modules
  • Series
    -
  • Polarity/Channel Type
    N-CHANNEL
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Package / Case
    SP1
  • Part Status
    Obsolete
  • Mount
    Chassis Mount, Screw
  • Number of Pins
    12
  • Subcategory
    Insulated Gate BIP Transistors
  • Number of Terminations
    9
  • Terminal Position
    UPPER
  • Terminal Form
    UNSPECIFIED
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Pin Count
    12
  • Qualification Status
    Not Qualified
  • Number of Elements
    2
  • Configuration
    Asymmetrical Bridge
  • Published
    2012
  • Case Connection
    ISOLATED
  • Height
    11.5mm
  • Length
    51.6mm
  • Width
    40.8mm
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -40°C
  • Max Power Dissipation
    250W
  • Current - Collector Cutoff (Max)
    250μA
  • Mounting Type
    Chassis Mount
  • Element Configuration
    Dual
  • Transistor Application
    POWER CONTROL
  • Collector Emitter Voltage (VCEO)
    600V
  • Max Collector Current
    65A
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    2.1V
  • VCEsat-Max
    2.45 V
  • Turn On Time
    52 ns
  • Input Capacitance
    2.2nF
  • IGBT Type
    NPT
  • Gate-Emitter Voltage-Max
    20V
  • Input
    Standard
  • NTC Thermistor
    Yes
  • Input Capacitance (Cies) @ Vce
    2.2nF @ 25V
  • Turn Off Time-Nom (toff)
    151 ns
  • Vce(on) (Max) @ Vge, Ic
    2.45V @ 15V, 50A

Environmental & Export Classifications

  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • RoHS Status
    RoHS Compliant
  • JESD-30 Code
    R-XUFM-X9

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