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APTGL475DA120D3G
- Manufacturer's Part No.:APTGL475DA120D3G
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:IGBT 1200V 610A 2080W D3
- Datasheet:
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- In Stock: 854
- Available: 36
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $156.64665 | US $156.65 |
10+ | US $135.76043 | US $1357.60 |
30+ | US $123.22870 | US $3696.86 |
100+ | US $112.78559 | US $11278.56 |
500+ | US $109.65266 | US $54826.33 |
1000+ | US $104.43110 | US $104431.10 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerMicrosemi
- Manufacturer's Part No.APTGL475DA120D3G
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - IGBTs - Modules
- Series-
- Polarity/Channel TypeN-CHANNEL
- Package / CaseD-3 Module
- Part StatusActive
- Operating Temperature-40°C~175°C TJ
- Factory Lead Time36 Weeks
- MountChassis Mount, Screw
- Number of Pins11
- SubcategoryInsulated Gate BIP Transistors
- Number of Terminations5
- Terminal PositionUPPER
- Terminal FormUNSPECIFIED
- Pin Count11
- Number of Elements1
- ConfigurationSingle
- Published2012
- Case ConnectionISOLATED
- Max Power Dissipation2.08kW
- Voltage - Collector Emitter Breakdown (Max)1200V
- Current - Collector Cutoff (Max)5mA
- Power - Max2080W
- Mounting TypeChassis Mount
- Transistor Element MaterialSILICON
- Transistor ApplicationPOWER CONTROL
- Collector Emitter Voltage (VCEO)2.2V
- Max Collector Current610A
- Collector Emitter Breakdown Voltage1.2kV
- Turn On Time270 ns
- Input Capacitance24.6nF
- IGBT TypeTrench Field Stop
- Gate-Emitter Voltage-Max20V
- InputStandard
- NTC ThermistorNo
- Input Capacitance (Cies) @ Vce24.6nF @ 25V
- Turn Off Time-Nom (toff)580 ns
- Vce(on) (Max) @ Vge, Ic2.2V @ 15V, 400A
Environmental & Export Classifications
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- RoHS StatusRoHS Compliant
- JESD-30 CodeR-XUFM-X5
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