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APTGT100DH60T3G

  • Available: 5804

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.00000US $0.00

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Product Parameter

  • Manufacturer
    Microsemi
  • Manufacturer's Part No.
    APTGT100DH60T3G
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Modules
  • Series
    -
  • ECCN
    EAR99
  • Input
    Standard
  • Mount
    Screw, Through Hole
  • IGBT Type
    Trench Field Stop
  • Pin Count
    25
  • Published
    2012
  • VCEsat-Max
    1.9 V
  • Part Status
    Obsolete
  • Power - Max
    340W
  • Subcategory
    Insulated Gate BIP Transistors
  • REACH Status
    REACH Unaffected
  • Turn On Time
    180 ns
  • Configuration
    Asymmetrical Bridge
  • Mounting Type
    Through Hole
  • Terminal Form
    UNSPECIFIED
  • NTC Thermistor
    Yes
  • Number of Pins
    16
  • Package / Case
    SP3
  • Case Connection
    ISOLATED
  • Factory Lead Time
    22 Weeks
  • Input Capacitance
    6.1nF
  • Terminal Position
    UPPER
  • Number of Elements
    2
  • Qualification Status
    Not Qualified
  • Element Configuration
    Dual
  • Max Collector Current
    150A
  • Max Power Dissipation
    340W
  • Operating Temperature
    -40°C~175°C TJ
  • Polarity/Channel Type
    N-CHANNEL
  • Number of Terminations
    11
  • Transistor Application
    POWER CONTROL
  • Vce(on) (Max) @ Vge, Ic
    1.9V @ 15V, 100A
  • Gate-Emitter Voltage-Max
    20V
  • Turn Off Time-Nom (toff)
    370 ns
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Transistor Element Material
    SILICON
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Input Capacitance (Cies) @ Vce
    6.1nF @ 25V
  • Collector Emitter Voltage (VCEO)
    600V
  • Current - Collector Cutoff (Max)
    250μA
  • Collector Emitter Breakdown Voltage
    600V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    RoHS Compliant
  • JESD-30 Code
    R-XUFM-X11
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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