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APTGT50TL601G

  • In Stock: 1688
  • Available: 1

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $93.18060US $93.18
10+US $69.88545US $698.85
30+US $60.56739US $1817.02
100+US $53.57884US $5357.88
500+US $50.31752US $25158.76
1000+US $46.59030US $46590.30

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Product Parameter

  • Manufacturer
    Microsemi
  • Manufacturer's Part No.
    APTGT50TL601G
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Modules
  • Series
    -
  • Polarity/Channel Type
    N-CHANNEL
  • Package / Case
    SP1
  • Part Status
    Active
  • Operating Temperature
    -40°C~175°C TJ
  • Factory Lead Time
    36 Weeks
  • Mount
    Chassis Mount, Screw
  • Number of Pins
    12
  • Subcategory
    Insulated Gate BIP Transistors
  • Number of Terminations
    10
  • Terminal Position
    UPPER
  • Terminal Form
    UNSPECIFIED
  • Pin Count
    12
  • Number of Elements
    4
  • Configuration
    Three Level Inverter
  • Published
    2012
  • Case Connection
    ISOLATED
  • Max Power Dissipation
    176W
  • Current - Collector Cutoff (Max)
    250μA
  • Power - Max
    176W
  • Mounting Type
    Chassis Mount
  • Transistor Element Material
    SILICON
  • Transistor Application
    POWER CONTROL
  • Collector Emitter Voltage (VCEO)
    600V
  • Max Collector Current
    80A
  • Collector Emitter Breakdown Voltage
    600V
  • VCEsat-Max
    1.9 V
  • Turn On Time
    170 ns
  • Input Capacitance
    3.15nF
  • IGBT Type
    Trench Field Stop
  • Gate-Emitter Voltage-Max
    20V
  • Input
    Standard
  • NTC Thermistor
    No
  • Input Capacitance (Cies) @ Vce
    3.15nF @ 25V
  • Turn Off Time-Nom (toff)
    310 ns
  • Vce(on) (Max) @ Vge, Ic
    1.9V @ 15V, 50A

Environmental & Export Classifications

  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • RoHS Status
    RoHS Compliant
  • JESD-30 Code
    R-XUFM-X10

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