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APTGT75A60T1G

  • Available: 36

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $60.49620US $60.50
10+US $45.37215US $453.72
30+US $39.32253US $1179.68
100+US $34.78531US $3478.53
500+US $32.66795US $16333.97
1000+US $30.24810US $30248.10

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    Microsemi
  • Manufacturer's Part No.
    APTGT75A60T1G
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Modules
  • Series
    -
  • ECCN
    EAR99
  • Input
    Standard
  • Mount
    Chassis Mount, Screw
  • Width
    40.8mm
  • Height
    11.5mm
  • Length
    51.6mm
  • IGBT Type
    Trench Field Stop
  • Lead Free
    Lead Free
  • Pin Count
    12
  • Published
    2007
  • VCEsat-Max
    1.9 V
  • Part Status
    Active
  • Pbfree Code
    yes
  • Power - Max
    250W
  • Subcategory
    Insulated Gate BIP Transistors
  • REACH Status
    REACH Unaffected
  • Turn On Time
    170 ns
  • Configuration
    Half Bridge
  • Mounting Type
    Chassis Mount
  • Terminal Form
    THROUGH-HOLE
  • NTC Thermistor
    Yes
  • Number of Pins
    12
  • Package / Case
    SP1
  • Case Connection
    ISOLATED
  • Terminal Finish
    TIN SILVER COPPER
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 3 weeks ago)
  • Factory Lead Time
    36 Weeks
  • Input Capacitance
    4.62nF
  • Terminal Position
    UPPER
  • Number of Elements
    2
  • Turn On Delay Time
    110 ns
  • Turn-Off Delay Time
    200 ns
  • Qualification Status
    Not Qualified
  • Element Configuration
    Dual
  • Max Collector Current
    100A
  • Max Power Dissipation
    250W
  • Operating Temperature
    -40°C~175°C TJ
  • Polarity/Channel Type
    N-CHANNEL
  • Number of Terminations
    12
  • Transistor Application
    MOTOR CONTROL
  • Vce(on) (Max) @ Vge, Ic
    1.9V @ 15V, 75A
  • Gate-Emitter Voltage-Max
    20V
  • Turn Off Time-Nom (toff)
    310 ns
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Transistor Element Material
    SILICON
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Input Capacitance (Cies) @ Vce
    4.62nF @ 25V
  • Collector Emitter Voltage (VCEO)
    600V
  • Current - Collector Cutoff (Max)
    250μA
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    1.5V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e1
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

SHIPPING GUIDE

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  • Shipping Cost

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  • Delivery Time

    We ship orders once daily, around 5 p.m., except on Sundays. The estimated delivery time may vary depending on the courier service you choose, but typically ranges from 5 to 7 business days.

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