APTM100H45SCTG
- Manufacturer's Part No.:APTM100H45SCTG
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:POWER MOS 7®
- Description:MOSFET 4N-CH 1000V 18A SP4
- Datasheet:
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- Available: 28
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $249.80460 | US $249.80 |
10+ | US $216.49732 | US $2164.97 |
30+ | US $196.51295 | US $5895.39 |
100+ | US $179.85931 | US $17985.93 |
500+ | US $174.86322 | US $87431.61 |
1000+ | US $166.53640 | US $166536.40 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerMicrosemi
- Manufacturer's Part No.APTM100H45SCTG
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesPOWER MOS 7®
- ECCNEAR99
- MountChassis Mount, Screw
- FET Type4 N-Channel (H-Bridge)
- PackagingBulk
- Pin Count14
- Published1997
- Rise Time12ns
- FET FeatureStandard
- Part StatusActive
- Pbfree Codeyes
- REACH StatusREACH Unaffected
- Mounting TypeChassis Mount
- Terminal FormUNSPECIFIED
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins4
- Operating ModeENHANCEMENT MODE
- Package / CaseSP4
- Case ConnectionISOLATED
- Fall Time (Typ)35 ns
- Terminal FinishTIN SILVER COPPER
- Lifecycle StatusIN PRODUCTION (Last Updated: 3 weeks ago)
- Factory Lead Time22 Weeks
- Power Dissipation357W
- Terminal PositionUPPER
- Additional FeatureAVALANCHE RATED
- Number of Elements4
- Turn On Delay Time10 ns
- Vgs(th) (Max) @ Id5V @ 2.5mA
- Turn-Off Delay Time121 ns
- Qualification StatusNot Qualified
- Max Power Dissipation357W
- Operating Temperature-40°C~150°C TJ
- Number of Terminations14
- Rds On (Max) @ Id, Vgs540m Ω @ 9A, 10V
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min1000V
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs154nC @ 10V
- Gate to Source Voltage (Vgs)30V
- Avalanche Energy Rating (Eas)2500 mJ
- Continuous Drain Current (ID)18A
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Drain to Source Voltage (Vdss)1000V 1kV
- Pulsed Drain Current-Max (IDM)72A
- Input Capacitance (Ciss) (Max) @ Vds4350pF @ 25V
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-609 Codee1
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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