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APTM100TA35FPG

  • Available: 36

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $246.45705US $246.46
10+US $213.59611US $2135.96
30+US $193.87955US $5816.39
100+US $177.44908US $17744.91
500+US $172.51994US $86259.97
1000+US $164.30470US $164304.70

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    Microsemi
  • Manufacturer's Part No.
    APTM100TA35FPG
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Chassis Mount, Screw
  • FET Type
    6 N-Channel (3-Phase Bridge)
  • Packaging
    Bulk
  • Pin Count
    21
  • Published
    2012
  • Rise Time
    12ns
  • FET Feature
    Standard
  • Part Status
    Active
  • Pbfree Code
    yes
  • REACH Status
    REACH Unaffected
  • Configuration
    3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
  • Mounting Type
    Chassis Mount
  • Terminal Form
    UNSPECIFIED
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Number of Pins
    6
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    SP6
  • Case Connection
    ISOLATED
  • Fall Time (Typ)
    40 ns
  • Terminal Finish
    TIN SILVER COPPER
  • Factory Lead Time
    36 Weeks
  • Power Dissipation
    390W
  • Terminal Position
    UPPER
  • Additional Feature
    AVALANCHE RATED
  • Number of Elements
    6
  • Turn On Delay Time
    18 ns
  • Vgs(th) (Max) @ Id
    5V @ 2.5mA
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    155 ns
  • Max Power Dissipation
    390W
  • Operating Temperature
    -40°C~150°C TJ
  • Number of Terminations
    21
  • Rds On (Max) @ Id, Vgs
    420m Ω @ 11A, 10V
  • Transistor Application
    SWITCHING
  • DS Breakdown Voltage-Min
    1000V
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    186nC @ 10V
  • Gate to Source Voltage (Vgs)
    30V
  • Avalanche Energy Rating (Eas)
    3000 mJ
  • Continuous Drain Current (ID)
    22A
  • Drain to Source Voltage (Vdss)
    1000V 1kV
  • Drain-source On Resistance-Max
    0.42Ohm
  • Pulsed Drain Current-Max (IDM)
    88A
  • Input Capacitance (Ciss) (Max) @ Vds
    5200pF @ 25V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-XUFM-X21
  • JESD-609 Code
    e1
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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