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APTM10HM19FT3G

  • Available: 36

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $93.70332US $93.70
10+US $72.88036US $728.80
30+US $62.46888US $1874.07
100+US $57.26314US $5726.31
500+US $55.18084US $27590.42
1000+US $52.05740US $52057.40

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    Microsemi
  • Manufacturer's Part No.
    APTM10HM19FT3G
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Chassis Mount, Screw
  • Width
    40.8mm
  • Height
    11.5mm
  • Length
    73.4mm
  • FET Type
    4 N-Channel (H-Bridge)
  • Packaging
    Bulk
  • Pin Count
    25
  • Published
    2006
  • Rise Time
    70ns
  • FET Feature
    Standard
  • Part Status
    Active
  • Pbfree Code
    yes
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Chassis Mount
  • Terminal Form
    UNSPECIFIED
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Number of Pins
    3
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    SP3
  • Case Connection
    ISOLATED
  • Fall Time (Typ)
    125 ns
  • Terminal Finish
    TIN SILVER COPPER
  • Factory Lead Time
    36 Weeks
  • Power Dissipation
    208W
  • Terminal Position
    UPPER
  • Additional Feature
    AVALANCHE RATED
  • Number of Channels
    1
  • Number of Elements
    4
  • Turn On Delay Time
    35 ns
  • Vgs(th) (Max) @ Id
    4V @ 1mA
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    95 ns
  • Element Configuration
    Single
  • Max Power Dissipation
    208W
  • Operating Temperature
    -40°C~150°C TJ
  • Number of Terminations
    25
  • Rds On (Max) @ Id, Vgs
    21m Ω @ 35A, 10V
  • Transistor Application
    SWITCHING
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    200nC @ 10V
  • Gate to Source Voltage (Vgs)
    30V
  • Continuous Drain Current (ID)
    70A
  • Drain to Source Voltage (Vdss)
    100V
  • Drain to Source Breakdown Voltage
    100V
  • Input Capacitance (Ciss) (Max) @ Vds
    5100pF @ 25V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-XUFM-X25
  • JESD-609 Code
    e1
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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