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APTMC120AM08CD3AG

  • Available: 15

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $2.00000US $2.00
10+US $1.80000US $18.00
30+US $1.40000US $42.00
100+US $1.15000US $115.00
500+US $1.10000US $550.00
1000+US $1.00000US $1000.00

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    Microsemi
  • Manufacturer's Part No.
    APTMC120AM08CD3AG
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Chassis Mount
  • FET Type
    2 N-Channel (Half Bridge)
  • Lead Free
    Lead Free
  • Packaging
    Bulk
  • Published
    1997
  • FET Feature
    Silicon Carbide (SiC)
  • Part Status
    Active
  • Power - Max
    1100W
  • Subcategory
    FET General Purpose Power
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Chassis Mount
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Package / Case
    D-3 Module
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 1 month ago)
  • Factory Lead Time
    22 Weeks
  • Number of Elements
    1
  • Vgs(th) (Max) @ Id
    2.2V @ 10mA (Typ)
  • Max Power Dissipation
    1.1kW
  • Operating Temperature
    -40°C~150°C TJ
  • Rds On (Max) @ Id, Vgs
    10m Ω @ 200A, 20V
  • Drain Current-Max (Abs) (ID)
    260A
  • Gate Charge (Qg) (Max) @ Vgs
    490nC @ 20V
  • Continuous Drain Current (ID)
    250A
  • Drain to Source Voltage (Vdss)
    1200V 1.2kV
  • Input Capacitance (Ciss) (Max) @ Vds
    9500pF @ 1000V
  • Current - Continuous Drain (Id) @ 25°C
    250A Tc

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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