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AUIRF1405ZL

  • Available: 56078

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $3.16958US $3.17
10+US $2.85262US $28.53
30+US $2.21871US $66.56
100+US $1.82251US $182.25
500+US $1.74327US $871.64
1000+US $1.58479US $1584.79

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    AUIRF1405ZL
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    HEXFET®
  • ECCN
    EAR99
  • Mount
    Through Hole
  • Width
    4.82mm
  • Height
    9.652mm
  • Length
    10.668mm
  • FET Type
    N-Channel
  • Packaging
    Tube
  • Published
    2007
  • Rise Time
    110ns
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Part Status
    Active
  • Subcategory
    FET General Purpose Power
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Through Hole
  • Number of Pins
    3
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    TO-262-3 Long Leads, I2Pak, TO-262AA
  • Case Connection
    DRAIN
  • Fall Time (Typ)
    82 ns
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Factory Lead Time
    16 Weeks
  • Power Dissipation
    230W
  • Threshold Voltage
    2V
  • Additional Feature
    AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY
  • Number of Elements
    1
  • Turn On Delay Time
    18 ns
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    48 ns
  • Element Configuration
    Single
  • Operating Temperature
    -55°C~175°C TJ
  • Power Dissipation-Max
    230W Tc
  • Number of Terminations
    3
  • Rds On (Max) @ Id, Vgs
    4.9m Ω @ 75A, 10V
  • Transistor Application
    SWITCHING
  • Reflow Temperature-Max (s)
    30
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    180nC @ 10V
  • Gate to Source Voltage (Vgs)
    20V
  • Avalanche Energy Rating (Eas)
    270 mJ
  • Continuous Drain Current (ID)
    150A
  • Peak Reflow Temperature (Cel)
    260
  • Drain-source On Resistance-Max
    0.0049Ohm
  • Pulsed Drain Current-Max (IDM)
    600A
  • Drain to Source Breakdown Voltage
    55V
  • Input Capacitance (Ciss) (Max) @ Vds
    4780pF @ 25V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Current - Continuous Drain (Id) @ 25°C
    150A Tc

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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