AUIRF7103QTR
- Manufacturer's Part No.:AUIRF7103QTR
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:Automotive, AEC-Q101, HEXFET®
- Description:MOSFET 2N-CH 50V 3A 8SOIC
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Available: 142854
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $1.80180 | US $1.80 |
10+ | US $1.20120 | US $12.01 |
30+ | US $0.90090 | US $27.03 |
100+ | US $0.72072 | US $72.07 |
500+ | US $0.66066 | US $330.33 |
1000+ | US $0.60060 | US $600.60 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.AUIRF7103QTR
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesAutomotive, AEC-Q101, HEXFET®
- ECCNEAR99
- MountSurface Mount
- Width4mm
- Height1.5mm
- Length5mm
- FET Type2 N-Channel (Dual)
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Published2009
- Rise Time1.7ns
- FET FeatureStandard
- Part StatusNot For New Designs
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Fall Time (Typ)2.3 ns
- Terminal FinishMatte Tin (Sn)
- Factory Lead Time26 Weeks
- Power Dissipation2.4W
- Threshold Voltage1V
- Additional FeatureHIGH RELIABILITY
- Number of Elements2
- Turn On Delay Time5.1 ns
- Vgs(th) (Max) @ Id3V @ 250μA
- Radiation HardeningNo
- Turn-Off Delay Time15 ns
- Element ConfigurationDual
- Max Power Dissipation2.4W
- Operating Temperature-55°C~175°C TJ
- Number of Terminations8
- Rds On (Max) @ Id, Vgs130m Ω @ 3A, 10V
- Transistor ApplicationSWITCHING
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)3A
- Gate Charge (Qg) (Max) @ Vgs15nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)3A
- Drain to Source Voltage (Vdss)50V
- Drain-source On Resistance-Max0.13Ohm
- Drain to Source Breakdown Voltage50V
- Input Capacitance (Ciss) (Max) @ Vds255pF @ 25V
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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