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AUIRF7341Q

  • Available: 3415

Reference Price(In US Dollars)

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    AUIRF7341Q
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    HEXFET®
  • ECCN
    EAR99
  • FET Type
    2 N-Channel (Dual)
  • HTS Code
    8541.29.00.95
  • Packaging
    Tube
  • Published
    2011
  • FET Feature
    Logic Level Gate
  • Part Status
    Obsolete
  • Power - Max
    2.4W
  • REACH Status
    REACH Unaffected
  • Configuration
    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
  • JEDEC-95 Code
    MS-012AA
  • Mounting Type
    Surface Mount
  • Surface Mount
    YES
  • Terminal Form
    GULL WING
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Additional Feature
    AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
  • Number of Elements
    2
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Operating Temperature
    -55°C~175°C TJ
  • Reach Compliance Code
    compliant
  • Number of Terminations
    8
  • Rds On (Max) @ Id, Vgs
    50m Ω @ 5.1A, 10V
  • Transistor Application
    SWITCHING
  • DS Breakdown Voltage-Min
    55V
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Transistor Element Material
    SILICON
  • Drain Current-Max (Abs) (ID)
    5.1A
  • Gate Charge (Qg) (Max) @ Vgs
    44nC @ 10V
  • Avalanche Energy Rating (Eas)
    140 mJ
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Drain to Source Voltage (Vdss)
    55V
  • Drain-source On Resistance-Max
    0.05Ohm
  • Pulsed Drain Current-Max (IDM)
    42A
  • Input Capacitance (Ciss) (Max) @ Vds
    780pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    5.1A

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    RoHS Compliant
  • JESD-30 Code
    R-PDSO-G8
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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