AUIRF7343QTR
- Manufacturer's Part No.:AUIRF7343QTR
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET N/P-CH 55V 4.7/3.4A 8SOIC
- Datasheet:
- Quantity:Buy NowAdd to Cart
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- In Stock: 4000
- Available: 111089
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $48.27200 | US $48.27 |
10+ | US $36.20400 | US $362.04 |
30+ | US $31.37680 | US $941.30 |
100+ | US $27.75640 | US $2775.64 |
500+ | US $26.06688 | US $13033.44 |
1000+ | US $24.13600 | US $24136.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.AUIRF7343QTR
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Width4mm
- Height1.5mm
- Length5mm
- FET TypeN and P-Channel
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Published2011
- FET FeatureLogic Level Gate
- Nominal Vgs1 V
- Part StatusNot For New Designs
- SubcategoryOther Transistors
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Terminal FinishMatte Tin (Sn)
- Factory Lead Time26 Weeks
- Power Dissipation2W
- Threshold Voltage1V
- Additional FeatureAVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
- Number of Elements2
- Vgs(th) (Max) @ Id1V @ 250μA
- Radiation HardeningNo
- Element ConfigurationDual
- Max Power Dissipation2W
- Operating Temperature-55°C~150°C TJ
- Polarity/Channel TypeN-CHANNEL AND P-CHANNEL
- Number of Terminations8
- Rds On (Max) @ Id, Vgs50m Ω @ 4.7A, 10V
- Transistor ApplicationSWITCHING
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)4.7A
- Gate Charge (Qg) (Max) @ Vgs36nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)3.4A
- Drain-source On Resistance-Max0.05Ohm
- Drain to Source Breakdown Voltage55V
- Input Capacitance (Ciss) (Max) @ Vds740pF @ 25V
- Current - Continuous Drain (Id) @ 25°C4.7A 3.4A
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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