AUIRFR6215TRL
- Manufacturer's Part No.:AUIRFR6215TRL
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET P-CH 150V 13A DPAK
- Datasheet:
- Quantity:Buy NowAdd to Cart
- Payment:
- Delivery:
- In Stock: 12000
- Available: 2613
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $5.77320 | US $5.77 |
10+ | US $5.19588 | US $51.96 |
30+ | US $4.04124 | US $121.24 |
100+ | US $3.31959 | US $331.96 |
500+ | US $3.17526 | US $1587.63 |
1000+ | US $2.88660 | US $2886.60 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.AUIRFR6215TRL
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountSurface Mount
- Width6.22mm
- Height2.52mm
- Length6.7056mm
- FET TypeP-Channel
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Published2011
- Rise Time36ns
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Part StatusActive
- SubcategoryOther Transistors
- REACH StatusREACH Unaffected
- JEDEC-95 CodeTO-252AA
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
- Case ConnectionDRAIN
- Contact PlatingTin
- Fall Time (Typ)37 ns
- Factory Lead Time16 Weeks
- Power Dissipation110W
- Additional FeatureAVALANCHE RATED, HIGH RELIABILITY
- Number of Channels1
- Number of Elements1
- Turn On Delay Time14 ns
- Vgs(th) (Max) @ Id4V @ 250μA
- Radiation HardeningNo
- Turn-Off Delay Time53 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max110W Tc
- Number of Terminations2
- Rds On (Max) @ Id, Vgs295m Ω @ 6.6A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs66nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)-13A
- Max Junction Temperature (Tj)175°C
- Peak Reflow Temperature (Cel)260
- Drain to Source Voltage (Vdss)150V
- Drain-source On Resistance-Max0.295Ohm
- Pulsed Drain Current-Max (IDM)44A
- Drain to Source Breakdown Voltage-150V
- Input Capacitance (Ciss) (Max) @ Vds860pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C13A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PSSO-G2
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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