AUIRFZ44ZS
- Manufacturer's Part No.:AUIRFZ44ZS
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- Description:MOSFET N-CH 55V 51A D2PAK
- Datasheet:
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- Available: 3726
Reference Price(In US Dollars)
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1+ | US $0.00000 | US $0.00 |
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.AUIRFZ44ZS
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- Time30
- MountSurface Mount
- Width11.3mm
- Height4.83mm
- Length10.67mm
- FET TypeN-Channel
- PackagingTube
- Published2010
- Rise Time68ns
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Part StatusDiscontinued
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Case ConnectionDRAIN
- Contact PlatingTin
- Fall Time (Typ)41 ns
- Factory Lead Time16 Weeks
- Power Dissipation80W
- Threshold Voltage2V
- Additional FeatureAVALANCHE RATED, ULTRA-LOW RESISTANCE
- Number of Elements1
- Turn On Delay Time14 ns
- Vgs(th) (Max) @ Id4V @ 250μA
- Radiation HardeningNo
- Turn-Off Delay Time33 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max80W Tc
- Number of Terminations2
- Rds On (Max) @ Id, Vgs13.9m Ω @ 31A, 10V
- Transistor ApplicationSWITCHING
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs43nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)51A
- Peak Reflow Temperature (Cel)260
- Pulsed Drain Current-Max (IDM)200A
- Drain to Source Breakdown Voltage55V
- Input Capacitance (Ciss) (Max) @ Vds1420pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C51A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PSSO-G2
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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