AUIRG4BC30S-S
- Manufacturer's Part No.:AUIRG4BC30S-S
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:IGBT 600V 34A 100W D2PAK
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- Available: 3480
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
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1+ | US $0.00000 | US $0.00 |
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.AUIRG4BC30S-S
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - IGBTs - Single
- Series-
- ECCNEAR99
- MountSurface Mount
- Width9.65mm
- Height4.83mm
- Length10.67mm
- Lead FreeLead Free
- PackagingTube
- Published2010
- Input TypeStandard
- Gate Charge50nC
- Part StatusObsolete
- SubcategoryInsulated Gate BIP Transistors
- REACH StatusREACH Unaffected
- Turn On Time40 ns
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Number of Pins3
- Package / CaseTO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Test Condition480V, 18A, 23 Ω, 15V
- Case ConnectionCOLLECTOR
- Contact PlatingTin
- Switching Energy260μJ (on), 3.45mJ (off)
- Factory Lead Time9 Weeks
- Power Dissipation100W
- Fall Time-Max (tf)590ns
- Number of Elements1
- Radiation HardeningNo
- Td (on/off) @ 25°C22ns/540ns
- Element ConfigurationSingle
- Max Collector Current34A
- Max Power Dissipation100W
- Operating Temperature-55°C~150°C TJ
- Polarity/Channel TypeN-CHANNEL
- Number of Terminations2
- Transistor ApplicationPOWER CONTROL
- Vce(on) (Max) @ Vge, Ic1.6V @ 15V, 18A
- Gate-Emitter Voltage-Max20V
- Turn Off Time-Nom (toff)1550 ns
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Gate-Emitter Thr Voltage-Max6V
- Peak Reflow Temperature (Cel)260
- Collector Emitter Voltage (VCEO)1.6V
- Current - Collector Pulsed (Icm)68A
- Collector Emitter Breakdown Voltage600V
- Collector Emitter Saturation Voltage1.6V
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PSSO-G2
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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