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BAS321,115
- Manufacturer's Part No.:BAS321,115
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- Description:DIODE GEN PURP 200V 250MA SOD323
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- Quantity:Buy NowAdd to Cart
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- In Stock: 300000
- Available: 1455359
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.02310 | US $0.02 |
10+ | US $0.01540 | US $0.15 |
30+ | US $0.01155 | US $0.35 |
100+ | US $0.00924 | US $0.92 |
500+ | US $0.00847 | US $4.24 |
1000+ | US $0.00770 | US $7.70 |
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- Description
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- Shopping Guide
The BAS321,115 is a specific type of transistor manufactured by Nexperia, a company known for its expertise in discrete semiconductors and integrated circuits. The BAS321 is a general-purpose NPN transistor, which is commonly used in various electronic applications due to its versatility and reliability.
Key Features:
- Type: NPN Bipolar Junction Transistor (BJT)
- Package: Typically available in a SOT23 package, which is a small, surface-mount package that allows for efficient use of space on printed circuit boards (PCBs).
- Voltage Rating: The BAS321 can handle a maximum collector-emitter voltage (Vce) of around 50V, making it suitable for a wide range of applications.
- Current Rating: It has a maximum collector current (Ic) rating of approximately 500mA, allowing it to drive moderate loads.
- Gain: The transistor features a current gain (hFE) that typically ranges from 100 to 300, depending on the specific operating conditions, which makes it effective for amplification purposes.
- Frequency Response: The BAS321 is capable of operating at frequencies up to several hundred MHz, making it suitable for RF applications as well as general switching tasks.
- Thermal Characteristics: It has a relatively low thermal resistance, which helps in managing heat dissipation during operation.
Applications:
The BAS321,115 is widely used in various applications, including:
- Switching Circuits: It can be used to switch loads on and off in electronic devices.
- Amplification: Suitable for audio and signal amplification in various electronic circuits.
- Signal Processing: Used in signal modulation and demodulation applications.
- LED Drivers: Commonly employed in driving LED circuits due to its ability to handle moderate current levels.
Electrical Characteristics:
- Collector-Emitter Breakdown Voltage (V(BR)CEO): Typically around 50V.
- Emitter-Base Breakdown Voltage (V(BR)EBO): Generally around 5V.
- Collector-Base Cut-off Current (I(CBO)): Very low, indicating minimal leakage current when the transistor is off.
Conclusion:
The BAS321,115 from Nexperia is a robust and versatile NPN transistor that is well-suited for a variety of electronic applications. Its compact size, combined with its reliable performance characteristics, makes it a popular choice among engineers and designers in the electronics industry. Whether used in consumer electronics, industrial applications, or RF circuits, the BAS321 provides a dependable solution for both switching and amplification needs.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
SHIPPING GUIDE
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Shipping Cost
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