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BAS321,115

  • In Stock: 300000
  • Available: 1455359

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.02310US $0.02
10+US $0.01540US $0.15
30+US $0.01155US $0.35
100+US $0.00924US $0.92
500+US $0.00847US $4.24
1000+US $0.00770US $7.70

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Description

The BAS321,115 is a specific type of transistor manufactured by Nexperia, a company known for its expertise in discrete semiconductors and integrated circuits. The BAS321 is a general-purpose NPN transistor, which is commonly used in various electronic applications due to its versatility and reliability.

Key Features:

  1. Type: NPN Bipolar Junction Transistor (BJT)
  2. Package: Typically available in a SOT23 package, which is a small, surface-mount package that allows for efficient use of space on printed circuit boards (PCBs).
  3. Voltage Rating: The BAS321 can handle a maximum collector-emitter voltage (Vce) of around 50V, making it suitable for a wide range of applications.
  4. Current Rating: It has a maximum collector current (Ic) rating of approximately 500mA, allowing it to drive moderate loads.
  5. Gain: The transistor features a current gain (hFE) that typically ranges from 100 to 300, depending on the specific operating conditions, which makes it effective for amplification purposes.
  6. Frequency Response: The BAS321 is capable of operating at frequencies up to several hundred MHz, making it suitable for RF applications as well as general switching tasks.
  7. Thermal Characteristics: It has a relatively low thermal resistance, which helps in managing heat dissipation during operation.

Applications:

The BAS321,115 is widely used in various applications, including:

  • Switching Circuits: It can be used to switch loads on and off in electronic devices.
  • Amplification: Suitable for audio and signal amplification in various electronic circuits.
  • Signal Processing: Used in signal modulation and demodulation applications.
  • LED Drivers: Commonly employed in driving LED circuits due to its ability to handle moderate current levels.

Electrical Characteristics:

  • Collector-Emitter Breakdown Voltage (V(BR)CEO): Typically around 50V.
  • Emitter-Base Breakdown Voltage (V(BR)EBO): Generally around 5V.
  • Collector-Base Cut-off Current (I(CBO)): Very low, indicating minimal leakage current when the transistor is off.

Conclusion:

The BAS321,115 from Nexperia is a robust and versatile NPN transistor that is well-suited for a variety of electronic applications. Its compact size, combined with its reliable performance characteristics, makes it a popular choice among engineers and designers in the electronics industry. Whether used in consumer electronics, industrial applications, or RF circuits, the BAS321 provides a dependable solution for both switching and amplification needs.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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