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BAT54S

  • In Stock: 20000
  • Available: 395000

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.03000US $0.03
10+US $0.02000US $0.20
30+US $0.01500US $0.45
100+US $0.01200US $1.20
500+US $0.01100US $5.50
1000+US $0.01000US $10.00

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Description

The BAT54S is a Schottky barrier diode manufactured by ON Semiconductor, designed for low-voltage and high-speed switching applications. It is particularly well-suited for use in RF applications, signal detection, and as a rectifier in low-power circuits.

Key Features:

  1. Package Type: The BAT54S is typically available in a small SOT-23 package, which is a surface-mount device (SMD) that allows for efficient use of board space and is suitable for automated assembly processes.

  2. Diode Configuration: The BAT54S is a dual diode configuration, meaning it contains two diodes in a single package. This feature allows for versatile circuit designs, enabling the use of both diodes in various configurations such as inverting, non-inverting, or as part of a bridge rectifier.

  3. Low Forward Voltage Drop: One of the standout characteristics of the BAT54S is its low forward voltage drop (typically around 0.3V at 10mA). This property makes it ideal for applications where power efficiency is critical, as it minimizes energy loss during operation.

  4. High-Speed Switching: The BAT54S is designed for high-speed switching applications, with a fast recovery time that allows it to operate effectively in high-frequency circuits. This makes it suitable for RF applications, signal processing, and other scenarios where rapid switching is essential.

  5. Reverse Voltage Rating: The BAT54S has a maximum reverse voltage rating of approximately 30V, making it suitable for a variety of low to moderate voltage applications. This rating ensures that the diode can withstand reverse bias conditions without breaking down.

  6. Low Leakage Current: The device exhibits low reverse leakage current, which is beneficial in battery-powered applications where minimizing power consumption is crucial.

  7. Temperature Range: The BAT54S operates effectively over a wide temperature range, typically from -55°C to +125°C, making it suitable for use in various environmental conditions.

Applications:

  • Signal Detection: The BAT54S is often used in RF signal detection circuits due to its fast response time and low forward voltage drop.
  • Rectification: It can be employed in low-power rectification applications, where efficiency is paramount.
  • Clamping and Protection: The diode can be used for clamping signals to protect sensitive components from voltage spikes.
  • Switching Circuits: Its high-speed characteristics make it ideal for use in switching power supplies and other fast-switching applications.

Conclusion:

The BAT54S from ON Semiconductor is a versatile and efficient Schottky diode that excels in low-voltage, high-speed applications. Its compact size, low forward voltage drop, and dual diode configuration make it a popular choice among engineers for a wide range of electronic designs.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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