BAT54S
- Manufacturer's Part No.:BAT54S
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- Description:SOT23 Schottky Barrier Diodes (SBD) RoHS
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- In Stock: 20000
- Available: 395000
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.03000 | US $0.03 |
10+ | US $0.02000 | US $0.20 |
30+ | US $0.01500 | US $0.45 |
100+ | US $0.01200 | US $1.20 |
500+ | US $0.01100 | US $5.50 |
1000+ | US $0.01000 | US $10.00 |
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- Description
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The BAT54S is a Schottky barrier diode manufactured by various semiconductor companies, including TWGMC (Taiwan Semiconductor Manufacturing Company). This diode is designed for high-speed switching applications and is particularly valued for its low forward voltage drop and fast recovery time.
Key Features:
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Package Type: The BAT54S typically comes in a small SOT-23 package, which is a surface-mount device (SMD). This compact form factor makes it suitable for space-constrained applications.
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Electrical Characteristics:
- Forward Voltage Drop (Vf): The BAT54S exhibits a low forward voltage drop, usually around 0.3V at a forward current of 10mA. This characteristic helps in reducing power loss during operation.
- Reverse Voltage (Vr): The maximum reverse voltage rating is typically around 30V, making it suitable for various low-voltage applications.
- Forward Current (If): The diode can handle a forward current of up to 200mA, which is adequate for many signal processing and power management tasks.
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Switching Speed: The BAT54S is known for its fast switching capabilities, which makes it ideal for high-frequency applications. Its low capacitance allows for quick response times, making it suitable for RF applications and signal demodulation.
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Temperature Range: The diode operates effectively over a wide temperature range, typically from -55°C to +150°C, ensuring reliability in various environmental conditions.
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Applications: The BAT54S is commonly used in:
- RF applications, such as mixers and detectors.
- Signal clamping and protection circuits.
- Power management circuits, including voltage regulation and rectification.
- General-purpose switching applications.
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Construction: The BAT54S features a metal-semiconductor junction, which is characteristic of Schottky diodes. This construction contributes to its low forward voltage drop and fast switching speed.
Summary:
The BAT54S from TWGMC is a versatile Schottky barrier diode that excels in high-speed and low-voltage applications. Its compact SOT-23 package, low forward voltage drop, and fast switching capabilities make it a popular choice among engineers for various electronic designs, particularly in RF and power management circuits.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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