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BAT54S

  • In Stock: 7200
  • Available: 9142

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.01854US $0.02
10+US $0.01236US $0.12
30+US $0.00927US $0.28
100+US $0.00742US $0.74
500+US $0.00680US $3.40
1000+US $0.00618US $6.18

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Description

The BAT54S is a Schottky barrier diode manufactured by Yangjie Electronic Technology, designed for various applications in electronic circuits. This component is particularly valued for its low forward voltage drop and fast switching capabilities, making it suitable for high-speed switching applications, rectification, and signal detection.

Key Features:

  1. Package Type: The BAT54S is typically available in a small SOT-23 package, which is a surface-mount device (SMD). This compact form factor allows for efficient use of space on printed circuit boards (PCBs), making it ideal for modern electronic designs where size is a critical factor.

  2. Electrical Characteristics:

    • Forward Voltage Drop (Vf): The BAT54S exhibits a low forward voltage drop, typically around 0.3V at a forward current of 1mA. This characteristic helps in minimizing power loss during operation.
    • Reverse Voltage (Vr): The diode has a maximum reverse voltage rating of about 30V, which makes it suitable for a variety of applications without the risk of breakdown under normal operating conditions.
    • Forward Current (If): The maximum forward current rating is generally around 200mA, allowing it to handle moderate current loads effectively.
  3. Switching Speed: The BAT54S is known for its fast switching speed, which is essential in applications such as RF (radio frequency) circuits, where rapid response times are crucial.

  4. Temperature Range: The diode operates effectively over a wide temperature range, typically from -55°C to +125°C, ensuring reliability in diverse environmental conditions.

  5. Applications: The BAT54S is commonly used in:

    • Power management circuits
    • Signal demodulation
    • Rectification in power supplies
    • Protection circuits to prevent reverse polarity damage
    • RF applications due to its low capacitance and fast switching characteristics
  6. Construction: The diode is constructed using silicon material, which is standard for semiconductor devices. The Schottky design features a metal-semiconductor junction, which contributes to its low forward voltage drop and fast recovery time.

Conclusion:

The BAT54S from Yangjie Electronic Technology is a versatile and efficient Schottky diode that meets the demands of modern electronic applications. Its compact size, low forward voltage drop, and fast switching capabilities make it an excellent choice for engineers and designers looking to optimize their circuit performance while maintaining reliability and efficiency.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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