BAT54XV2T1G
- Manufacturer's Part No.:BAT54XV2T1G
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- Description:DIODE SCHOTTKY 30V 200MA SOD523
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- In Stock: 68400
- Available: 2352739
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.05222 | US $0.05 |
10+ | US $0.03481 | US $0.35 |
30+ | US $0.02611 | US $0.78 |
100+ | US $0.02089 | US $2.09 |
500+ | US $0.01915 | US $9.58 |
1000+ | US $0.01741 | US $17.41 |
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- Description
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The BAT54XV2T1G is a Schottky barrier diode manufactured by ON Semiconductor, designed for various applications in electronic circuits. Here’s a detailed description of its features and specifications:
General Description:
The BAT54XV2T1G is a dual Schottky diode housed in a compact SOT-23 package. It is optimized for low voltage and high-speed switching applications, making it suitable for use in RF applications, signal detection, and clamping circuits.
Key Features:
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Dual Diode Configuration: The device contains two independent Schottky diodes, allowing for versatile circuit designs and space-saving layouts.
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Low Forward Voltage Drop: The BAT54XV2T1G exhibits a low forward voltage drop (typically around 0.3V at 1mA), which enhances efficiency in power-sensitive applications.
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High-Speed Switching: The Schottky design enables fast switching speeds, making it ideal for high-frequency applications.
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Reverse Voltage Rating: The maximum reverse voltage (VR) is typically rated at 30V, allowing it to handle a variety of voltage levels in different applications.
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Low Leakage Current: The device features low reverse leakage current, which is crucial for battery-operated devices and helps in maintaining overall circuit efficiency.
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Temperature Range: The BAT54XV2T1G operates effectively over a wide temperature range, typically from -55°C to +125°C, making it suitable for various environmental conditions.
Electrical Characteristics:
- Forward Current (IF): The maximum forward current is typically rated at 200mA.
- Reverse Recovery Time (trr): The reverse recovery time is very short, contributing to its high-speed performance.
- Capacitance: The junction capacitance is low, which is beneficial for high-frequency applications.
Package Information:
- Type: SOT-23
- Dimensions: The SOT-23 package is compact, with a footprint that allows for easy integration into printed circuit boards (PCBs).
Applications:
The BAT54XV2T1G is widely used in:
- RF applications (e.g., mixers, detectors)
- Signal clamping and protection circuits
- Power management circuits
- General-purpose switching applications
Conclusion:
The BAT54XV2T1G from ON Semiconductor is a versatile and efficient dual Schottky diode that meets the demands of modern electronic applications. Its low forward voltage drop, high-speed switching capabilities, and compact packaging make it an excellent choice for engineers looking to optimize their designs for performance and space.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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