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BAV199,215

  • In Stock: 100000
  • Available: 1833752

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.03305US $0.03
10+US $0.02203US $0.22
30+US $0.01652US $0.50
100+US $0.01322US $1.32
500+US $0.01212US $6.06
1000+US $0.01102US $11.02

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Quick RFQ
  • Description
  • Alternatives
  • Shopping Guide
Description

The BAV199,215 is a dual switching diode manufactured by Nexperia, designed for various applications in electronic circuits. This component is particularly valued for its versatility and reliability in signal processing and switching applications.

Key Features:

  1. Configuration: The BAV199,215 consists of two diodes housed in a single package, making it efficient for space-constrained designs. This dual configuration allows for the simultaneous handling of two separate signals or functions.

  2. Package Type: It is typically available in a small SOT23 package, which is a surface-mount technology (SMT) package. This compact size is ideal for modern electronic devices where board space is at a premium.

  3. Electrical Characteristics:

    • Reverse Voltage (VR): The BAV199,215 can handle a maximum reverse voltage of around 30V, making it suitable for a variety of low to medium voltage applications.
    • Forward Current (IF): The diodes can conduct a forward current of up to 200mA, allowing them to manage moderate power levels effectively.
    • Forward Voltage Drop (VF): The forward voltage drop is typically low, around 0.7V at 10mA, which contributes to higher efficiency in circuits by minimizing power loss.
  4. Switching Speed: The BAV199,215 is designed for fast switching applications, with a recovery time that makes it suitable for high-frequency operations. This characteristic is particularly beneficial in RF applications and signal processing.

  5. Temperature Range: The device operates effectively over a wide temperature range, typically from -55°C to +150°C, ensuring reliability in various environmental conditions.

  6. Applications: The BAV199,215 is commonly used in:

    • Signal routing and switching
    • Clamping and protection circuits
    • RF applications
    • General-purpose rectification
  7. Construction: The diodes are constructed using silicon technology, which provides good thermal stability and performance consistency.

Summary:

The BAV199,215 from Nexperia is a robust and efficient dual diode solution, ideal for a range of electronic applications. Its compact size, low forward voltage drop, and fast switching capabilities make it a preferred choice for engineers looking to optimize circuit performance while maintaining reliability. Whether used in consumer electronics, telecommunications, or industrial applications, the BAV199,215 stands out as a versatile component in modern electronic design.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

SHIPPING GUIDE

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