BAV70LT1G
- Manufacturer's Part No.:BAV70LT1G
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- Description:DIODE ARRAY GP 100V 200MA SOT23
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- In Stock: 264000
- Available: 4878530
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.02596 | US $0.03 |
10+ | US $0.01730 | US $0.17 |
30+ | US $0.01298 | US $0.39 |
100+ | US $0.01038 | US $1.04 |
500+ | US $0.00952 | US $4.76 |
1000+ | US $0.00865 | US $8.65 |
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The BAV70LT1G is a small-signal diode manufactured by ON Semiconductor, designed for various applications in electronic circuits. Here’s a detailed description of its features and specifications:
General Description:
The BAV70LT1G is a dual, common-cathode diode housed in a compact SOT-23 package. It is primarily used for signal processing, switching, and rectification in low-power applications. The dual configuration allows for efficient use of space on a PCB, making it ideal for compact designs.
Key Features:
- Dual Diode Configuration: The BAV70LT1G contains two diodes in a single package, which can be used in various configurations, such as full-wave rectification or for signal clamping.
- Small Package Size: The SOT-23 package measures approximately 2.9 mm x 1.3 mm, making it suitable for space-constrained applications.
- Low Forward Voltage Drop: The diode exhibits a low forward voltage drop (typically around 0.7V at 1mA), which enhances efficiency in low-voltage applications.
- High Speed: The BAV70LT1G is designed for high-speed switching, making it suitable for RF applications and fast signal processing.
- Reverse Voltage Rating: It has a maximum reverse voltage rating of 70V, allowing it to handle a variety of signal levels without breakdown.
- Low Leakage Current: The diode features low reverse leakage current, which is crucial for maintaining signal integrity in sensitive applications.
Electrical Characteristics:
- Forward Current (IF): Maximum of 200 mA.
- Reverse Voltage (VR): Maximum of 70 V.
- Forward Voltage Drop (VF): Typically 0.7 V at 1 mA.
- Reverse Recovery Time (trr): Fast recovery time, typically around 4 ns, which is beneficial for high-frequency applications.
Applications:
- Signal Clamping: Protects sensitive components from voltage spikes.
- Switching Circuits: Used in various switching applications due to its fast response time.
- Rectification: Suitable for low-power rectification in power supply circuits.
- RF Applications: Ideal for radio frequency applications due to its high-speed characteristics.
Packaging:
The BAV70LT1G is available in a SOT-23 package, which is surface-mountable, allowing for automated assembly processes. The package is designed to provide good thermal performance and reliability.
Conclusion:
The BAV70LT1G from ON Semiconductor is a versatile and efficient dual diode that is well-suited for a wide range of electronic applications. Its compact size, low forward voltage drop, and high-speed performance make it an excellent choice for modern electronic designs requiring reliability and efficiency.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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