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BAV99WT1G

  • In Stock: 172930
  • Available: 3429461

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.05082US $0.05
10+US $0.03388US $0.34
30+US $0.02541US $0.76
100+US $0.02033US $2.03
500+US $0.01863US $9.32
1000+US $0.01694US $16.94

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Quick RFQ
  • Description
  • Alternatives
  • Shopping Guide
Description

The BAV99WT1G is a dual switching diode manufactured by ON Semiconductor, designed for various applications in electronic circuits. Here’s a detailed description of its features and specifications:

General Description:

The BAV99WT1G is a small-signal, dual diode housed in a compact SOT-23 package. It is primarily used for switching and signal processing applications, making it suitable for use in high-speed circuits. The device is designed to provide low forward voltage drop and fast switching speeds, which are essential for efficient performance in modern electronic devices.

Key Features:

  • Dual Diode Configuration: The BAV99WT1G contains two diodes in a single package, allowing for space-saving designs in circuit layouts.
  • Low Forward Voltage Drop: The forward voltage drop is typically around 0.7V at a forward current of 1mA, which helps in reducing power loss during operation.
  • Fast Switching Speed: The device exhibits fast reverse recovery time, making it ideal for high-frequency applications.
  • High Reverse Voltage Rating: The maximum reverse voltage (V_R) is rated at 45V, providing robustness against voltage spikes in circuits.
  • Compact SOT-23 Package: The SOT-23 package dimensions are approximately 2.9mm x 1.3mm x 1.1mm, making it suitable for surface-mount technology (SMT) applications.

Electrical Characteristics:

  • Forward Current (I_F): The maximum forward current is rated at 200mA, allowing for a wide range of applications.
  • Reverse Current (I_R): The reverse leakage current is low, typically around 1µA at V_R = 45V, which contributes to the overall efficiency of the device.
  • Capacitance: The junction capacitance is low, typically around 10pF, which is beneficial for high-speed switching applications.

Applications:

The BAV99WT1G is commonly used in:

  • Signal switching
  • Level shifting
  • Clamping applications
  • Protection circuits
  • RF applications

Thermal and Mechanical Characteristics:

  • Operating Temperature Range: The device can operate in a temperature range from -55°C to +150°C, making it suitable for various environmental conditions.
  • Storage Temperature Range: The storage temperature range is from -55°C to +150°C, ensuring reliability over time.

Conclusion:

The BAV99WT1G from ON Semiconductor is a versatile and efficient dual diode that meets the demands of modern electronic applications. Its combination of low forward voltage drop, fast switching capabilities, and compact packaging makes it an excellent choice for engineers looking to optimize their designs for performance and space efficiency.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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