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BC637RL1G

  • Available: 594

Reference Price(In US Dollars)

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1+US $0.00000US $0.00

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Product Parameter

  • Manufacturer
    ON Semiconductor
  • Manufacturer's Part No.
    BC637RL1G
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - Bipolar (BJT) - Single
  • Series
    -
  • Polarity/Channel Type
    NPN
  • Package / Case
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Part Status
    Obsolete
  • Operating Temperature
    -55°C~150°C TJ
  • Lifecycle Status
    LAST SHIPMENTS (Last Updated: 4 days ago)
  • Number of Pins
    3
  • Packaging
    Tape & Reel (TR)
  • Base Part Number
    BC637
  • Surface Mount
    NO
  • Number of Terminations
    3
  • Terminal Finish
    Tin/Silver/Copper (Sn/Ag/Cu)
  • Terminal Position
    BOTTOM
  • Pin Count
    3
  • Number of Elements
    1
  • Lead Free
    Lead Free
  • Radiation Hardening
    No
  • Published
    2011
  • Pbfree Code
    yes
  • Max Power Dissipation
    625mW
  • Transistor Type
    NPN
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Mounting Type
    Through Hole
  • Transistor Element Material
    SILICON
  • Element Configuration
    Single
  • Collector Emitter Voltage (VCEO)
    60V
  • Max Collector Current
    1A
  • Collector Emitter Breakdown Voltage
    60V
  • Transition Frequency
    200MHz
  • hFE Min
    25
  • Power Dissipation
    625mW
  • Emitter Base Voltage (VEBO)
    5V
  • Gain Bandwidth Product
    200MHz
  • Collector Base Voltage (VCBO)
    60V
  • Frequency
    200MHz
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    40 @ 150mA 2V
  • Vce Saturation (Max) @ Ib, Ic
    500mV @ 50mA, 500mA

Environmental & Export Classifications

  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • RoHS Status
    RoHS Compliant
  • JESD-609 Code
    e1

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