BC807-40

The BC807-40 is a high-performance NPN bipolar junction transistor (BJT) manufactured by NXP Semiconductors, designed for a variety of general-purpose applications. This transistor is particularly well-suited for low-power switching and amplification tasks in electronic circuits.

Key Features:

1. Type: NPN Bipolar Junction Transistor
2. Package: The BC807-40 is typically available in a compact SOT-23 package, which is a surface-mount device (SMD) that allows for efficient use of PCB space and is suitable for automated assembly processes.
3. Voltage Ratings: The transistor has a maximum collector-emitter voltage (Vce) of 45V, making it suitable for applications that require moderate voltage handling.
4. Current Ratings: It can handle a maximum continuous collector current (Ic) of 500mA, which allows it to drive small loads effectively.
5. Power Dissipation: The BC807-40 has a maximum power dissipation rating of around 500mW, which indicates the amount of power it can safely dissipate without overheating.
6. Gain Characteristics: The transistor features a current gain (hFE) range of approximately 100 to 600, depending on the specific operating conditions. This high gain makes it effective for amplification applications.
7. Frequency Response: The BC807-40 has a transition frequency (fT) of around 150MHz, which allows it to operate effectively in high-frequency applications, making it suitable for RF amplification and switching.
8. Temperature Range: It operates effectively over a temperature range of -55°C to +150°C, ensuring reliability in various environmental conditions.

Applications:

The BC807-40 is widely used in various applications, including:

• Signal Amplification: It is commonly used in audio and radio frequency amplification circuits.
• Switching Applications: The transistor can be used in low-power switching applications, such as driving small relays or LEDs.
• Linear Amplifiers: It is suitable for use in linear amplifier circuits where signal fidelity is important.
• General Purpose: The BC807-40 is often utilized in general-purpose electronic circuits due to its versatility and reliability.

Electrical Characteristics:

• Collector-Emitter Breakdown Voltage (V(BR)CEO): 45V
• Emitter-Base Breakdown Voltage (V(BR)EBO): 5V
• Collector Current (Ic): 500mA
• Power Dissipation (Ptot): 500mW
• Current Gain (hFE): 100 to 600

Conclusion:

The BC807-40 from NXP Semiconductors is a versatile and reliable NPN transistor that is well-suited for a wide range of electronic applications. Its combination of moderate voltage and current ratings, along with its high gain and frequency response, makes it an excellent choice for both hobbyist and professional electronic designs.