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BC817,215

  • In Stock: 871000
  • Available: 3398307

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.01958US $0.02
10+US $0.01306US $0.13
30+US $0.00979US $0.29
100+US $0.00783US $0.78
500+US $0.00718US $3.59
1000+US $0.00653US $6.53

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Quick RFQ
  • Description
  • Alternatives
  • Shopping Guide
Description

The BC817,215 is a versatile NPN bipolar junction transistor (BJT) manufactured by Nexperia, designed for general-purpose switching and amplification applications. It is part of the BC817 series, which is widely used in various electronic circuits due to its reliability and performance characteristics.

Key Features:

  1. Type: NPN Transistor
  2. Package: The BC817,215 is typically available in a compact SOT-23 package, which is a surface-mount device (SMD) that allows for efficient use of PCB space.
  3. Maximum Collector Current (Ic): The transistor can handle a maximum collector current of up to 500 mA, making it suitable for driving small loads.
  4. Collector-Emitter Voltage (Vce): It has a maximum collector-emitter voltage rating of 45 V, allowing it to operate in a variety of voltage environments.
  5. Gain (hFE): The transistor features a current gain (hFE) range of approximately 100 to 800, depending on the collector current, which makes it effective for amplification purposes.
  6. Transition Frequency (fT): The BC817,215 has a transition frequency of around 100 MHz, indicating its capability for high-speed switching applications.
  7. Thermal Characteristics: It has a maximum junction temperature of 150°C, which provides a good thermal margin for operation in various environments.

Applications:

The BC817,215 is commonly used in:

  • Switching Applications: It can be used to control loads such as relays, motors, and LEDs.
  • Amplification: Suitable for audio and radio frequency amplification circuits.
  • Signal Processing: Used in various signal processing applications due to its high gain and frequency response.
  • Level Shifting: It can be employed in level shifting applications where different voltage levels need to be interfaced.

Electrical Characteristics:

  • Base-Emitter Voltage (Vbe): Typically around 0.7 V when in the active region.
  • Power Dissipation (Ptot): The maximum power dissipation is around 500 mW, which is important for thermal management in circuit design.

Conclusion:

The BC817,215 from Nexperia is a reliable and efficient NPN transistor that is well-suited for a wide range of electronic applications. Its combination of compact size, high current handling capability, and good thermal performance makes it a popular choice among engineers and hobbyists alike. Whether used in simple switching circuits or more complex amplification tasks, the BC817,215 provides a robust solution for various electronic design needs.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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