BC850BLT1G

The BC850BLT1G is a general-purpose NPN bipolar junction transistor (BJT) manufactured by ON Semiconductor. It is designed for a variety of applications, including switching and amplification in low-power electronic circuits.

Key Features:

1. Package Type: The BC850BLT1G is typically housed in a SOT-23 package, which is a small, surface-mount device (SMD) that allows for efficient use of board space and is suitable for automated assembly processes.

2. Electrical Characteristics:

   • Collector-Emitter Voltage (Vce): The maximum collector-emitter voltage is typically around 45V, making it suitable for a range of applications without the risk of breakdown.
   • Collector Current (Ic): The maximum collector current is approximately 100mA, allowing it to handle moderate loads.
   • DC Current Gain (hFE): The transistor exhibits a current gain (hFE) in the range of 100 to 600, depending on the specific operating conditions, which makes it effective for amplification purposes.

3. Operating Temperature: The BC850BLT1G can operate over a temperature range of -55°C to +150°C, making it suitable for both consumer and industrial applications.

4. Switching Speed: The transistor is capable of fast switching speeds, which is beneficial for applications that require quick on/off control.

5. Applications: Common applications include signal amplification, switching circuits, and general-purpose use in consumer electronics, automotive systems, and industrial controls.

6. Pin Configuration: The SOT-23 package typically features three pins: the emitter (E), base (B), and collector (C). The pin configuration is designed for easy integration into circuit designs.

Summary:

The BC850BLT1G from ON Semiconductor is a versatile NPN transistor that combines compact size, robust electrical characteristics, and a wide operating temperature range, making it an excellent choice for a variety of electronic applications. Its ability to handle moderate currents and voltages, along with its fast switching capabilities, allows it to be effectively used in both amplification and switching roles in electronic circuits.