BC856S,125
- Manufacturer's Part No.:BC856S,125
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- Series:Automotive, AEC-Q101
- Description:TRANS 2PNP 65V 0.1A 6TSSOP
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- Available: 13
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.19215 | US $0.19 |
10+ | US $0.12810 | US $1.28 |
30+ | US $0.09607 | US $2.88 |
100+ | US $0.07686 | US $7.69 |
500+ | US $0.07046 | US $35.23 |
1000+ | US $0.06405 | US $64.05 |
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- Description
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The BC856S,125 is a small-signal PNP transistor manufactured by Nexperia, designed for various low-power amplification and switching applications. Here’s a detailed description of its key features and specifications:
General Description:
- Type: PNP Bipolar Junction Transistor (BJT)
- Package: Typically available in a SOT23 package, which is a compact surface-mount package that allows for efficient use of PCB space.
- Configuration: The BC856S is designed for low-voltage and low-current applications, making it suitable for signal processing in consumer electronics, automotive, and industrial applications.
Electrical Characteristics:
- Collector-Emitter Voltage (Vce): The maximum voltage that can be applied between the collector and emitter is typically around 45V, allowing it to handle a range of applications without risk of breakdown.
- Emitter-Base Voltage (Veb): The maximum voltage between the emitter and base is usually around 5V, which is important for ensuring the transistor operates within safe limits.
- Collector Current (Ic): The maximum continuous collector current is generally around 100mA, making it suitable for low-power applications.
- DC Current Gain (hFE): The transistor exhibits a high current gain, typically ranging from 100 to 600, depending on the specific operating conditions, which enhances its efficiency in amplification tasks.
Thermal Characteristics:
- Junction Temperature (Tj): The maximum junction temperature is typically rated at 150°C, allowing for operation in a variety of thermal environments.
- Thermal Resistance: The thermal resistance from junction to ambient is low, which helps in dissipating heat effectively during operation.
Switching Characteristics:
- The BC856S is capable of fast switching speeds, making it suitable for applications that require quick on/off control, such as in digital circuits or signal modulation.
Applications:
- Signal Amplification: Ideal for audio and radio frequency applications where low noise and high gain are required.
- Switching Applications: Can be used in low-power switching circuits, such as in relay drivers or as part of a larger control system.
- Level Shifting: Useful in interfacing different voltage levels in mixed-signal systems.
Additional Features:
- Low Noise: The design of the BC856S minimizes noise, making it suitable for sensitive applications.
- High Reliability: Nexperia’s manufacturing processes ensure high reliability and consistency in performance.
Conclusion:
The BC856S,125 from Nexperia is a versatile and reliable PNP transistor that is well-suited for a variety of low-power applications. Its compact size, high gain, and robust electrical characteristics make it a popular choice among engineers and designers in the electronics industry.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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