BC857CDW1T1
- Manufacturer's Part No.:BC857CDW1T1
- Manufacturer:
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- Series:-
- Description:TRANS 2PNP 45V 0.1A SOT363
- Datasheet:
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- Available: 8940
Reference Price(In US Dollars)
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1+ | US $0.00000 | US $0.00 |
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Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.BC857CDW1T1
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - Bipolar (BJT) - Arrays
- Series-
- ECCNEAR99
- hFE Min420
- PolarityPNP
- Frequency100MHz
- Lead FreeContains Lead
- PackagingTape & Reel (TR)
- Pin Count6
- Published2005
- Part StatusObsolete
- Pbfree Codeno
- SubcategoryOther Transistors
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Surface MountYES
- Terminal FormGULL WING
- Current Rating-100mA
- Number of Pins6
- Package / Case6-TSSOP, SC-88, SOT-363
- Terminal FinishTin/Lead (Sn/Pb)
- Transistor Type2 PNP (Dual)
- Base Part NumberBC857CD
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 week ago)
- Power Dissipation380mW
- Number of Elements2
- Voltage - Rated DC-45V
- Qualification StatusNot Qualified
- Transition Frequency100MHz
- Element ConfigurationDual
- Max Collector Current100mA
- Max Power Dissipation380mW
- Operating Temperature-55°C~150°C TJ
- Reach Compliance Codenot_compliant
- Gain Bandwidth Product100MHz
- Number of Terminations6
- Transistor ApplicationAMPLIFIER
- Reflow Temperature-Max (s)30
- Emitter Base Voltage (VEBO)5V
- Transistor Element MaterialSILICON
- Collector Base Voltage (VCBO)-50V
- Peak Reflow Temperature (Cel)240
- Vce Saturation (Max) @ Ib, Ic650mV @ 5mA, 100mA
- Collector Emitter Voltage (VCEO)650mV
- Current - Collector Cutoff (Max)15nA ICBO
- Collector Emitter Breakdown Voltage45V
- Collector Emitter Saturation Voltage-650mV
- DC Current Gain (hFE) (Min) @ Ic, Vce420 @ 2mA 5V
Environmental & Export Classifications
- HTSUS8541.21.0075
- ECCN CodeEAR99
- RoHS StatusRoHS non-compliant
- JESD-609 Codee0
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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