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BCP56-10

  • In Stock: 25000
  • Available: 8024

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.15246US $0.15
10+US $0.10164US $1.02
30+US $0.07623US $2.29
100+US $0.06098US $6.10
500+US $0.05590US $27.95
1000+US $0.05082US $50.82

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Description

The BCP56-10 is a high-performance NPN bipolar junction transistor (BJT) manufactured by NXP Semiconductors, designed for various applications in electronic circuits. This transistor is particularly well-suited for use in low to medium power amplification and switching applications.

Key Features:

  1. Type: NPN Transistor
  2. Package: Typically available in a TO-220 or similar package, which allows for efficient heat dissipation and easy mounting on PCBs.
  3. Voltage Rating: The BCP56-10 has a maximum collector-emitter voltage (Vce) rating of around 45V, making it suitable for a wide range of applications.
  4. Current Rating: It can handle a continuous collector current (Ic) of up to 3A, which is ideal for driving loads in various circuits.
  5. Gain: The transistor exhibits a high current gain (hFE), typically ranging from 100 to 300, depending on the specific operating conditions. This high gain allows for effective amplification of input signals.
  6. Frequency Response: The BCP56-10 has a transition frequency (fT) of approximately 150 MHz, making it suitable for high-frequency applications.
  7. Thermal Characteristics: With a maximum junction temperature of 150°C, the BCP56-10 is designed to operate reliably under various thermal conditions. Its thermal resistance is low, which helps in managing heat during operation.

Applications:

  • Audio Amplifiers: The BCP56-10 is often used in audio amplification circuits due to its ability to provide high gain and handle significant power levels.
  • Switching Circuits: It is suitable for use in switching applications, such as driving relays or controlling motors, where fast switching times are essential.
  • Signal Processing: The transistor can be utilized in signal processing applications, including RF amplifiers and oscillators, due to its high frequency response.

Electrical Characteristics:

  • Collector-Emitter Saturation Voltage (Vce(sat)): Typically around 0.5V at a specified collector current, indicating efficient operation in saturation mode.
  • Base-Emitter Voltage (Vbe): Generally around 0.7V when in active mode, which is standard for silicon BJTs.

Conclusion:

The BCP56-10 from NXP Semiconductors is a versatile and reliable NPN transistor that offers a combination of high current handling, good voltage ratings, and excellent gain characteristics. Its robust design makes it suitable for a variety of applications in consumer electronics, industrial equipment, and automotive systems. Whether used in amplification or switching roles, the BCP56-10 is a dependable choice for engineers and designers looking for performance and reliability in their electronic circuits.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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