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BCX55-10,115

  • Available: 114000

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.12870US $0.13
10+US $0.08580US $0.86
30+US $0.06435US $1.93
100+US $0.05148US $5.15
500+US $0.04719US $23.60
1000+US $0.04290US $42.90

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Description

The BCX55-10,115 is a high-performance NPN transistor manufactured by Nexperia, designed for a variety of general-purpose applications. This transistor is particularly well-suited for use in low to medium power switching and amplification tasks.

Key Features:

  1. Type: NPN Bipolar Junction Transistor (BJT)
  2. Package: Typically available in a TO-92 package, which is a cylindrical plastic housing with three leads extending from the base. This package is compact and suitable for through-hole mounting.
  3. Maximum Collector-Emitter Voltage (Vce): The BCX55-10 can handle a maximum Vce of around 45V, making it suitable for applications that require moderate voltage levels.
  4. Maximum Collector Current (Ic): It can support a continuous collector current of up to 1A, allowing it to drive loads effectively in various circuits.
  5. Gain (hFE): The transistor exhibits a high current gain (hFE) in the range of 100 to 300, depending on the specific operating conditions. This high gain allows for efficient amplification of input signals.
  6. Transition Frequency (fT): The BCX55-10 has a transition frequency of approximately 150 MHz, which indicates its capability for high-frequency applications.
  7. Thermal Characteristics: The device has a maximum junction temperature of 150°C, providing a good thermal margin for reliable operation in various environments.

Applications:

  • Switching Circuits: Ideal for use in relay drivers, motor drivers, and other switching applications where control of higher power loads is required.
  • Amplification: Suitable for audio and RF amplification, where linearity and gain are critical.
  • Signal Processing: Can be used in signal processing circuits, including oscillators and amplifiers in communication devices.

Electrical Characteristics:

  • Collector-Base Voltage (Vcb): Typically rated at 50V.
  • Emitter-Base Voltage (Veb): Rated at 5V, ensuring safe operation in various configurations.
  • Power Dissipation (Pd): The maximum power dissipation is around 625 mW, which is important for thermal management in circuit design.

Conclusion:

The BCX55-10,115 from Nexperia is a versatile and reliable NPN transistor that offers a combination of high voltage and current handling capabilities, making it suitable for a wide range of electronic applications. Its robust design and favorable electrical characteristics make it a popular choice among engineers and hobbyists alike for building efficient and effective electronic circuits.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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