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BDP954H6327XTSA1

  • Available: 2598

Reference Price(In US Dollars)

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    BDP954H6327XTSA1
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - Bipolar (BJT) - Single
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    3.5mm
  • Height
    1.6mm
  • Length
    6.5mm
  • Frequency
    100MHz
  • Packaging
    Tape & Reel (TR)
  • Published
    2011
  • Part Status
    Discontinued
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Terminal Form
    GULL WING
  • Number of Pins
    4
  • Package / Case
    TO-261-4, TO-261AA
  • Case Connection
    COLLECTOR
  • Contact Plating
    Tin
  • Transistor Type
    PNP
  • Power Dissipation
    5W
  • Terminal Position
    DUAL
  • Number of Elements
    1
  • Radiation Hardening
    No
  • Transition Frequency
    100MHz
  • Element Configuration
    Single
  • Max Collector Current
    3A
  • Max Power Dissipation
    5W
  • Operating Temperature
    150°C TJ
  • Polarity/Channel Type
    PNP
  • Number of Terminations
    4
  • Transistor Application
    AMPLIFIER
  • Emitter Base Voltage (VEBO)
    5V
  • Transistor Element Material
    SILICON
  • Collector Base Voltage (VCBO)
    120V
  • Vce Saturation (Max) @ Ib, Ic
    500mV @ 200mA, 2A
  • Current - Collector (Ic) (Max)
    3A
  • Collector Emitter Voltage (VCEO)
    500mV
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Collector Emitter Breakdown Voltage
    100V
  • Collector Emitter Saturation Voltage
    500mV
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    85 @ 500mA 1V

Environmental & Export Classifications

  • HTSUS
    8541.29.0075
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

SHIPPING GUIDE

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  • Delivery Time

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