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BDV64B

  • Available: 42

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.00000US $0.00

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Product Parameter

  • Manufacturer
    ON Semiconductor
  • Manufacturer's Part No.
    BDV64B
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - Bipolar (BJT) - Single
  • Series
    -
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Package / Case
    TO-218-3
  • Part Status
    Obsolete
  • Operating Temperature
    -65°C~150°C TJ
  • Lifecycle Status
    LAST SHIPMENTS (Last Updated: 2 weeks ago)
  • Number of Pins
    3
  • Packaging
    Tube
  • Subcategory
    Other Transistors
  • Surface Mount
    NO
  • Number of Terminations
    3
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Peak Reflow Temperature (Cel)
    240
  • Reach Compliance Code
    not_compliant
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Lead Free
    Contains Lead
  • Published
    2002
  • Pbfree Code
    no
  • Current Rating
    -10A
  • Voltage - Rated DC
    -100V
  • Case Connection
    COLLECTOR
  • Max Power Dissipation
    125W
  • Transistor Type
    PNP - Darlington
  • Current - Collector Cutoff (Max)
    1mA
  • Power - Max
    125W
  • Mounting Type
    Through Hole
  • Transistor Element Material
    SILICON
  • Polarity
    PNP
  • Element Configuration
    Single
  • Transistor Application
    AMPLIFIER
  • Collector Emitter Voltage (VCEO)
    2V
  • Max Collector Current
    10A
  • Collector Emitter Breakdown Voltage
    100V
  • Transition Frequency
    0.1MHz
  • hFE Min
    1000
  • Emitter Base Voltage (VEBO)
    5V
  • Collector Base Voltage (VCBO)
    100V
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    1000 @ 5A 4V
  • Vce Saturation (Max) @ Ib, Ic
    2V @ 20mA, 5A

Environmental & Export Classifications

  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • RoHS Status
    Non-RoHS Compliant
  • JESD-609 Code
    e0

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