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BF908WR,115

  • Available: 3981

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.00000US $0.00

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Product Parameter

  • Manufacturer
    NXP Semiconductors
  • Manufacturer's Part No.
    BF908WR,115
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - RF
  • Series
    -
  • ECCN
    EAR99
  • HTS Code
    8541.21.00.75
  • Frequency
    200MHz
  • Packaging
    Tape & Reel (TR)
  • Pin Count
    4
  • Published
    1995
  • Part Status
    Obsolete
  • Subcategory
    FET General Purpose Power
  • Noise Figure
    0.6dB
  • REACH Status
    REACH Unaffected
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Surface Mount
    YES
  • Terminal Form
    GULL WING
  • Current - Test
    15mA
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Operating Mode
    DUAL GATE, DEPLETION MODE
  • Package / Case
    SC-82A, SOT-343
  • Voltage - Test
    8V
  • Case Connection
    SOURCE
  • Terminal Finish
    Tin (Sn)
  • Transistor Type
    N-Channel Dual Gate
  • Voltage - Rated
    12V
  • Base Part Number
    BF908
  • Additional Feature
    LOW NOISE
  • Number of Elements
    1
  • Qualification Status
    Not Qualified
  • Current Rating (Amps)
    40mA
  • Number of Terminations
    4
  • Transistor Application
    AMPLIFIER
  • Feedback Cap-Max (Crss)
    0.045 pF
  • DS Breakdown Voltage-Min
    12V
  • Reflow Temperature-Max (s)
    40
  • Operating Temperature (Max)
    150°C
  • Power Dissipation-Max (Abs)
    0.3W
  • Transistor Element Material
    SILICON
  • Drain Current-Max (Abs) (ID)
    0.04A
  • Peak Reflow Temperature (Cel)
    260

Environmental & Export Classifications

  • HTSUS
    8541.21.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-PDSO-G4
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

SHIPPING GUIDE

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  • Shipping Cost

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  • Delivery Time

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