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BFG 235 E6327

  • Available: 3324

Reference Price(In US Dollars)

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    BFG 235 E6327
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - Bipolar (BJT) - RF
  • Series
    -
  • ECCN
    EAR99
  • Gain
    12.5dB
  • Packaging
    Tape & Reel (TR)
  • Published
    2007
  • Part Status
    Obsolete
  • Power - Max
    2W
  • Subcategory
    Other Transistors
  • REACH Status
    REACH Unaffected
  • Configuration
    SINGLE WITH BUILT-IN RESISTOR
  • Mounting Type
    Surface Mount
  • Surface Mount
    YES
  • Terminal Form
    GULL WING
  • Package / Case
    TO-261-4, TO-261AA
  • Case Connection
    COLLECTOR
  • Transistor Type
    NPN
  • Terminal Position
    DUAL
  • Additional Feature
    BUILT IN EMITTER BALLASTING RESISTOR
  • Number of Elements
    1
  • Qualification Status
    Not Qualified
  • Transition Frequency
    5500MHz
  • Operating Temperature
    150°C TJ
  • Polarity/Channel Type
    NPN
  • Frequency - Transition
    5.5GHz
  • Highest Frequency Band
    L B
  • Number of Terminations
    4
  • Transistor Application
    AMPLIFIER
  • Noise Figure (dB Typ @ f)
    1.7dB @ 900MHz
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Power Dissipation-Max (Abs)
    2W
  • Transistor Element Material
    SILICON
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Collector-Base Capacitance-Max
    3.6pF
  • Current - Collector (Ic) (Max)
    300mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    75 @ 200mA 8V
  • Voltage - Collector Emitter Breakdown (Max)
    15V

Environmental & Export Classifications

  • HTSUS
    8541.29.0075
  • ECCN Code
    EAR99
  • RoHS Status
    RoHS non-compliant
  • JESD-30 Code
    R-PDSO-G4
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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  • Delivery Time

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