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BFP196WE6327HTSA1

  • Available: 3274

Reference Price(In US Dollars)

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1+US $0.00000US $0.00

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    BFP196WE6327HTSA1
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - Bipolar (BJT) - RF
  • Series
    -
  • ECCN
    EAR99
  • Gain
    12.5dB ~ 19dB
  • Mount
    Surface Mount
  • Packaging
    Tape & Reel (TR)
  • Published
    2011
  • Part Status
    Obsolete
  • Pbfree Code
    yes
  • Power - Max
    700mW
  • REACH Status
    REACH Unaffected
  • Configuration
    SINGLE
  • Mounting Type
    Surface Mount
  • Terminal Form
    GULL WING
  • Number of Pins
    4
  • Package / Case
    SC-82A, SOT-343
  • Case Connection
    COLLECTOR
  • Contact Plating
    Tin
  • Transistor Type
    NPN
  • Base Part Number
    BFP196
  • Terminal Position
    DUAL
  • Number of Elements
    1
  • Qualification Status
    Not Qualified
  • Transition Frequency
    7500MHz
  • Max Breakdown Voltage
    12V
  • Max Collector Current
    150mA
  • Max Power Dissipation
    700mW
  • Operating Temperature
    150°C TJ
  • Polarity/Channel Type
    NPN
  • Reach Compliance Code
    unknown
  • Frequency - Transition
    7.5GHz
  • Highest Frequency Band
    L B
  • Number of Terminations
    4
  • Transistor Application
    AMPLIFIER
  • Noise Figure (dB Typ @ f)
    1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
  • Reflow Temperature-Max (s)
    40
  • Transistor Element Material
    SILICON
  • Collector Base Voltage (VCBO)
    20V
  • Peak Reflow Temperature (Cel)
    260
  • Collector Emitter Voltage (VCEO)
    12V
  • Collector Emitter Breakdown Voltage
    12V
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    70 @ 50mA 8V

Environmental & Export Classifications

  • HTSUS
    8541.21.0075
  • ECCN Code
    EAR99
  • RoHS Status
    RoHS Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

SHIPPING GUIDE

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  • Delivery Time

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