BFP460H6327XTSA1

The BFP460H6327XTSA1 is a high-frequency, low-noise NPN bipolar junction transistor (BJT) manufactured by Infineon Technologies, designed for use in high-frequency amplifier and low-noise applications. This transistor features a heterojunction bipolar transistor (HBT) technology, providing excellent high-frequency performance with low noise figure characteristics. With its compact and surface-mountable package, the BFP460H6327XTSA1 is suitable for space-constrained applications in various industries, including telecommunications, wireless infrastructure, and RF systems.

Specifications:

• Type: NPN Bipolar Junction Transistor (BJT)
• Frequency Range: Up to 60 GHz
• Noise Figure: Typically 1 dB at 5 GHz
• Maximum Collector-Base Voltage (VCBO): 4 V
• Maximum Collector Current (IC): 30 mA
• Package: SOT-343 (Surface-Mount)

Features:

• High-Frequency Performance: Capable of operating at frequencies up to 60 GHz, making it suitable for high-frequency amplifier applications.
• Low Noise Figure: Offers low noise figure characteristics, making it suitable for low-noise amplifier (LNA) designs.
• Heterojunction Bipolar Transistor (HBT) Technology: Utilizes HBT technology for improved high-frequency performance and low noise characteristics.
• Surface-Mount Package: Compact SOT-343 package facilitates easy integration into surface-mount assemblies, suitable for space-constrained designs.
• Wide Operating Temperature Range: Operates reliably over a wide temperature range, making it suitable for various environmental conditions.
• RoHS Compliant: Manufactured in compliance with RoHS directives, ensuring environmental responsibility.

Applications:

• High-Frequency Amplifiers
• Low-Noise Amplifiers (LNA)
• RF Front-End Modules
• Wireless Infrastructure
• Telecommunications Systems
• Radar Systems