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BFR92WE6327XT

  • Available: 4275
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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part #
    BFR92WE6327XT
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - Bipolar (BJT) - RF
  • Series
    -
  • Maximum Collector Cut-Off Current (nA)
    100
  • Maximum Collector-Emitter Voltage (V)
    15
  • Maximum Transition Frequency (MHz)
    5000(Typ)
  • Maximum Collector Base Voltage (V)
    20
  • Maximum Emitter Base Voltage (V)
    2.5
  • Maximum DC Collector Current (A)
    0.03
  • Number of Elements per Chip
    1
  • Minimum DC Current Gain
    70@15mA@8V
  • EU RoHS
    Compliant
  • PPAP
    Unknown
  • Automotive
    Yes
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Maximum Power Dissipation (mW)
    280
  • Standard Package Name
    SOT
  • Supplier Package
    SOT-323
  • Package Length
    2
  • Package Height
    0.9(Max)
  • Package Width
    1.25
  • PCB changed
    3
  • Lead Shape
    Gull-wing
  • ECCN (US)
    EAR99
  • Mounting
    Surface Mount
  • Maximum Collector-Emitter Voltage Range (V)
    &l;20
  • Maximum DC Collector Current Range (A)
    0.001 to 0.06
  • Maximum Emitter Cut-Off Current (nA)
    100000
  • Minimum DC Current Gain Range
    50 to 120
  • Operational Bias Conditions
    8V/15mA
  • Maximum Noise Figure (dB)
    2(Typ)
  • Typical Output Capacitance (pF)
    0.42
  • Part Status
    Obsolete
  • Packaging
    Tape and Reel
  • Pin Count
    3
  • Configuration
    Single
  • Type
    NPN
  • Material
    Si
  • Typical Power Gain (dB)
    17
  • Typical Input Capacitance (pF)
    0.66

Environmental & Export Classifications

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  • Delivery Time

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